Patents by Inventor Eddy J. Song

Eddy J. Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9449859
    Abstract: A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate define a second plenum. A plurality of gas conduits extend from the second plenum through the heat exchanging channel and the first plenum. The method generally includes flowing a first gas through a first plenum into a processing region, and flowing a second gas through a second plenum into a processing region. A heat exchanging fluid is introduced to a heat exchanging channel disposed between the first plenum and the second plenum. The first gas and the second gas are then reacted to form a film on a substrate.
    Type: Grant
    Filed: October 8, 2010
    Date of Patent: September 20, 2016
    Assignee: Applied Materials, Inc.
    Inventor: Eddy J. Song
  • Publication number: 20160136660
    Abstract: A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate define a second plenum. A plurality of gas conduits extend from the second plenum through the heat exchanging channel and the first plenum. The method generally includes flowing a first gas through a first plenum into a processing region, and flowing a second gas through a second plenum into a processing region. A heat exchanging fluid is introduced to a heat exchanging channel disposed between the first plenum and the second plenum. The first gas and the second gas are then reacted to form a film on a substrate.
    Type: Application
    Filed: January 21, 2016
    Publication date: May 19, 2016
    Inventor: Eddy J. SONG
  • Publication number: 20130052804
    Abstract: A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate define a second plenum. A plurality of gas conduits extend from the second plenum through the heat exchanging channel and the first plenum. The method generally includes flowing a first gas through a first plenum into a processing region, and flowing a second gas through a second plenum into a processing region. A heat exchanging fluid is introduced to a heat exchanging channel disposed between the first plenum and the second plenum. The first gas and the second gas are then reacted to form a film on a substrate.
    Type: Application
    Filed: October 8, 2010
    Publication date: February 28, 2013
    Applicant: Applied Materials, Imn,
    Inventor: Eddy J. Song