Abstract: The present invention provides a method for forming wafer level package. The wafer level package comprising: a plurality of dies formed on the wafer; an I/O metal pad formed on the first surface of the wafer; and coating a photo sensitive polymer, on the first surface of the wafer, then a portion of the film is removed by laser. In the next step, coating a first photoresist on the second surface of the wafer. Forming a first conductive layer in the opening of the photo sensitive polyimide and then covering a I/O metal pad. Next, forming a seeding layer with copper on the top of the first conductive layer and on the photo sensitive polymer; and forming a second photoresist on the seeding layer to define the circuit pattern diagram. Then, forming a second conductive layer to the circuit pattern diagram located on the defined area of the second photoresist.

Abstract: The present invention comprises a plurality of dies formed on the wafer and an I/O metal pad formed on the first surface of the wafer. Then, photo PI is coated on the first surface, then a portion of the PI is removed by laser. Next step, a first photoresist is coated on the second surface of the wafer and the photoresist includes positive photoresist. A first conductive layer is formed in the hole of the photo PI and covers a metal pad. Subsequently, a seeding layer with copper is formed on the top of the first conductive layer and the photo sensitive polymer layer. Then, a second photoresist is formed on the seeding layer to define the circuit pattern diagram. Then, a second cnductive layer is formed. Next step is to remove the second and the first photoresist covered by the second photoresist, thereby forming trenches therein. Then, the filling material is filled into the trench and covers the circuit pattern diagram.

Abstract: The present invention comprises a plurality of dies formed on the wafer and an I/O metal pad formed on the first surface of the wafer. Then, photo PI is coated on the first surface, then a portion of the PI is removed by laser. Next step, a first photoresist is coated on the second surface of the wafer and the photoresist includes positive photoresist. A first conductive layer is formed in the hole of the photo PI and covers a metal pad. Subsequently, a seeding layer with copper is formed on the top of the first conductive layer and the photo sensitive polymer layer. Then, a second photoresist is formed on the seeding layer to define the circuit pattern diagram. Then, a second conductive layer is formed. Next step is to remove the second and the first photoresist covered by the second photoresist, thereby forming trenches therein. Then, the filling material is filled into the trench and covers the circuit pattern diagram.