Abstract: This apparatus permits the non-destructive examination of entire surfaces for defects and contamination, and can detect microscopically small dot-shaped and linear defects and extremely fine macroscopic non-homogeneous areas. For this purpose, an astigmatic lens system (5) is placed in the optical path between light source (2) and objective (9) which produces a cigar-shaped intermediate image (31), in which the feed offset in scanning the surface (10) depends on the intermediate image (31) and is equal to the length of the intermediate image (31) projected upon this surface (10). A dark-field stop assembly (18) with an adjustable dark-field deflection system (8) is placed in the optical path between the lens system (5) and the objective (9), which projects the light beam (1) after deflection exactly centered at right angles through the objective (9) upon the surface of the object (10). The light reflected by the surface (10) and collected by the objective (9) is projected to a photo detector.

Abstract: This apparatus permits the non-destructive examination of entire surfaces for defects and contamination, and can detect microscopically small dot-shaped and linear defects and extremely fine macroscopic non-homogeneous areas. For this purpose, an adjustable lens system (5) is placed in the optical path between light source (2) and objective (9) which produces various intermediate images (31). A first cigar-shaped intermediate image is used for the first scan of the whole of the surface at a relatively large feed offset, and a second dot-shaped intermediate image is used for a second scan of partial areas of the surface at a small feed offset.A dark-field stop assembly (18) with an adjustable dark-field deflection system (8) is placed in the optical path between the lens system (5) and the objective (9), which projects the light beam (1) after deflection exactly centered at right angles through the objective (9) upon the surface of the object (10).

Abstract: Apparatus for detecting defects and dust on patterned surfaces, such as patterned wafers, or grooved video disks, utilizes a scanning laser that provides light scattered by defects and dust. The scattered light is detected substantially free of diffracted beams from the pattern by a mask having apertures arranged to pass to the detector only scattered light and to block diffracted light and specular reflections.

Abstract: A method of determining the crystalline or structural quality of phase transformable material such as silicon uses light scattering. The material is exposed to a beam of light of a selected wavelength. Scattered light having an intensity above a threshold is detected to provide a signal which is used to control the intensity of a display beam of a visual display device. The threshold is varied to thereby vary the display beam intensity so as to provide the minimum intensity of display beam which yields a full display. The value of the thusly adjusted threshold intensity is used as a direct measure of the structural quality of the material.The light scattering process is used to determine the phase of deposited material.A layer of silicon material annealed from as-deposited amorphous phase material is easily and quickly distinguished from material as-deposited crystalline phase material and subsequently annealed.

Abstract: A method of determining the crystalline quality of heteroepitaxial silicon material, particularly silicon-on-sapphire (SOS) and of homoepitaxial silicon material which uses the light scattering is disclosed. The material is exposed to a beam of light of a selected wavelength, and scattered light having an intensity above a threshold is detected to provide a signal which is used to control the intensity of a display beam of a visual display device. The threshold is varied to thereby vary the display beam intensity so as to provide the minimum intensity of display beam which yields a full display. The value of the thusly adjusted threshold intensity is used as a direct measure of the quality of the material.

Abstract: A laser beam projected through a prism in a direction normal to the surface of a circular wafer is focused into a spot area and scanned along a spiral path on this surface. The focusing means comprises a relatively large aperture lens and the prism is on the lens axis. The retroreflected specular light passes through the lens and is prevented from reaching a light detector in the image plane of the lens by the prism. When the beam illuminates a microscopic surface defect on the wafer, the light is diffracted and reflected therefrom, and the lens captures that portion of the reflected light within the solid angle subtended by the lens, and passes that portion thereof not blocked by the prism, to the light detector. The output of the detector may be employed to intensity modulate the beam of a cathode-ray tube display, the beam of which is spirally scanned in synchronism with the scanning of the light beam.