Abstract: An X-ray imager having an X-ray source, a semiconductor detector, and a processor. On a rear side of the semiconductor detector facing away from the front side, in each of a plurality of imaging regions of the semiconductor detector, at least one imaging electrode is arranged and a plurality of detectors each contact at least one of the imaging electrodes in order to acquire first measurement values relating to X-ray signals of the imaging electrodes. The processor is configured to establish an image dataset dependent upon the first measurement values. At least one additional electrode is arranged on the rear side of the semiconductor detector outside the imaging regions. At least one current sensor contacts the additional electrode or at least one of the additional electrodes in each case to acquire the current flow by way of the second measurement values relating to the at least one additional electrode.

Abstract: An X-ray detector includes a stack arrangement with a scattered radiation grid and a planar converter element including a first surface and a second surface. The converter element includes a first electrode embodied on the first surface and a pixelated second electrode with two adjacent first electrode elements. The two adjacent first electrode elements include a first width and a first length and the two adjacent first electrode elements are embodied the second surface opposite the first surface. The scattered radiation grid includes a grid wall with a thickness along the boundary between the two adjacent first electrode elements. The grid wall is arranged to be substantially perpendicular on the first surface and, in a projection, substantially parallel to the direction of incidence of the radiation and to the surface normal of the first surface. The grid wall at least partially overlaps the two adjacent first electrode elements.

Abstract: A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

Abstract: An X-ray detector includes an arrangement of detector elements and an evaluation logic of the arrangement of detector elements. The evaluation logic includes a multi-level first multiplexer. A plurality of detector elements are assigned to a first group and each detector element of the first group is assigned to an input of a first level of the multi-level first multiplexer. The respective total number of the inputs of the levels of the multi-level first multiplexer is greater than the total number of outputs of the levels of the multi-level first multiplexer. A serial output is assigned to an output of a last level of the multi-level first multiplexer.

Abstract: An X-ray detector is disclosed, including a detection unit to generate a detection signal for incident X-ray radiation; a signal analysis module to determine a set of count rates for incident X-ray radiation based upon the detection signal and signal analysis parameters for X-ray radiation; and a switchover control unit for switching between first signal analysis parameters and second signal analysis parameters. When an amount of X-ray radiation is incident on the detection module, a first set of count rates is generated for a first time interval based upon first signal analysis parameters and a second set of count rates is generated for a second time interval based upon second signal analysis parameters, different from the first signal analysis parameters. An X-ray imaging system including the detector; a method for determining count rates for X-ray radiation; and a method for calibrating signal analysis parameters are also disclosed.

Abstract: In a method and control unit for activating an X-ray detector, having an X-ray sensitive sensor layer and an arrangement of pixel electrodes connected at the back to the sensor layer, an individually adjusted depletion voltage is applied to each of the pixel electrodes. The value of the depletion voltages applied to different pixel electrodes is chosen to be different such that the effective pixel sizes respectively associated with the pixel electrodes are aligned with each other.

Abstract: A method is disclosed for detecting x-rays using an x-ray detector which includes a direct-conversion semiconductor detector element. Additional radiation is supplied to the semiconductor detector element using a radiation source, and the supply of the additional radiation is controlled and/or regulated on the basis of a specified target value. In at least one embodiment, the target value can be specified in a variable manner over time as a sequence of target values. An x-ray detector system is further disclosed, with which the method can be carried out.

Abstract: A direct conversion X-ray detector for the detection of X-rays includes at least a semiconductor used for detecting X-rays, which has areas that are shaded against X-rays and unshaded areas, a pixelated electrode attached to the semiconductor and an all-over electrode attached to the semiconductor opposite the pixelated electrode, and at least one light source to illuminate the all-over electrode with additional light radiation for the purpose of generating additional charge carriers. In an embodiment, the at least one light source is designed such that the shaded areas are irradiated with a different intensity of the additional light radiation than are the unshaded areas. A CT system including the direct conversion X-ray detector is also disclosed, together with a method for the detection of incident X-rays via direct conversion X-ray detector, wherein the shaded areas are irradiated with a different intensity of the additional light radiation than the unshaded areas.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.

Abstract: An X-ray detector includes an arrangement of detector elements and an evaluation logic of the arrangement of detector elements. The evaluation logic includes a multi-level first multiplexer. A plurality of detector elements are assigned to a first group and each detector element of the first group is assigned to an input of a first level of the multi-level first multiplexer. The respective total number of the inputs of the levels of the multi-level first multiplexer is greater than the total number of outputs of the levels of the multi-level first multiplexer. A serial output is assigned to an output of a last level of the multi-level first multiplexer.

Abstract: A detector module is disclosed for an X-ray detector. In an embodiment, the detector module includes a number of sensor boards arranged adjacent to each other on a module support, each sensor board including, in a stack formation, a sensor layer having a sensor surface and a support ceramic by which the sensor layer is thermally coupled to the module support. A number of elements are arranged on the side of the support ceramic that faces the module support in a stack formation and at least one heating element is included which, in a plane of projection perpendicular to the stack formation, at least partially covers at least the area of the support ceramic that is free from the elements. An X-ray detector including a number of detector modules is also disclosed.

Abstract: A detector module is disclosed for an X-ray detector. In an embodiment, the detector module includes a number of sensor boards arranged adjacent to each other on a module support, each sensor board including, in a stack formation, a sensor layer having a sensor surface and a support ceramic by which the sensor layer is thermally coupled to the module support. A number of elements are arranged on the side of the support ceramic that faces the module support in a stack formation and at least one heating element is included which, in a plane of projection perpendicular to the stack formation, at least partially covers at least the area of the support ceramic that is free from the elements. An X-ray detector including a number of detector modules is also disclosed.

Abstract: In a method and control unit for activating an X-ray detector, having an X-ray sensitive sensor layer and an arrangement of pixel electrodes connected at the back to the sensor layer, an individually adjusted depletion voltage is applied to each of the pixel electrodes. The value of the depletion voltages applied to different pixel electrodes is chosen to be different such that the effective pixel sizes respectively associated with the pixel electrodes are aligned with each other.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.

Abstract: A direct conversion X-ray detector for the detection of X-rays includes at least a semiconductor used for detecting X-rays, which has areas that are shaded against X-rays and unshaded areas, a pixelated electrode attached to the semiconductor and an all-over electrode attached to the semiconductor opposite the pixelated electrode, and at least one light source to illuminate the all-over electrode with additional light radiation for the purpose of generating additional charge carriers. In an embodiment, the at least one light source is designed such that the shaded areas are irradiated with a different intensity of the additional light radiation than are the unshaded areas. A CT system including the direct conversion X-ray detector is also disclosed, together with a method for the detection of incident X-rays via direct conversion X-ray detector, wherein the shaded areas are irradiated with a different intensity of the additional light radiation than the unshaded areas.

Abstract: A method is disclosed for detecting x-rays using an x-ray detector which includes a direct-conversion semiconductor detector element. Additional radiation is supplied to the semiconductor detector element using a radiation source, and the supply of the additional radiation is controlled and/or regulated on the basis of a specified target value. In at least one embodiment, the target value can be specified in a variable manner over time as a sequence of target values. An x-ray detector system is further disclosed, with which the method can be carried out.

Abstract: A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

Abstract: An X-ray detector is disclosed, including a detection unit to generate a detection signal for incident X-ray radiation; a signal analysis module to determine a set of count rates for incident X-ray radiation based upon the detection signal and signal analysis parameters for X-ray radiation; and a switchover control unit for switching between first signal analysis parameters and second signal analysis parameters. When an amount of X-ray radiation is incident on the detection module, a first set of count rates is generated for a first time interval based upon first signal analysis parameters and a second set of count rates is generated for a second time interval based upon second signal analysis parameters, different from the first signal analysis parameters. An X-ray imaging system including the detector; a method for determining count rates for X-ray radiation; and a method for calibrating signal analysis parameters are also disclosed.