Abstract: A low voltage detector (100) includes a power supply voltage monitor circuit (110) that produces a voltage VSP related to a first a power supply voltage, and a voltage generator (105), which includes a plurality of self-cascode MOSFET (SCM) structures (101-103) in a cascade configuration, that generates a reference voltage Vxm. A voltage comparator (140) outputs an output signal in response to a differential between Vxm and VSP, wherein Vxm and VSP have proportional to absolute temperature behavior (PTAT) over temperature with respect to a second power supply voltage. The output signal changes state when the first power supply voltage equals a trip point of the comparator. Each SCM structure is sized to provide a rate of change with temperature of the PTAT behavior of Vxm that matches a rate of change with temperature of the PTAT behavior of VSP.

Abstract: A low voltage detector (100) includes a power supply voltage monitor circuit (110) that produces a voltage VSP related to a first a power supply voltage, and a voltage generator (105), which includes a plurality of self-cascode MOSFET (SCM) structures (101-103) in a cascade configuration, that generates a reference voltage Vxm. A voltage comparator (140) outputs an output signal in response to a differential between Vxm and VSP, wherein Vxm and VSP have proportional to absolute temperature behavior (PTAT) over temperature with respect to a second power supply voltage. The output signal changes state when the first power supply voltage equals a trip point of the comparator. Each SCM structure is sized to provide a rate of change with temperature of the PTAT behavior of Vxm that matches a rate of change with temperature of the PTAT behavior of VSP.

Abstract: A low voltage detector (100) includes a voltage and current reference circuit (102); a power supply voltage monitor circuit (104), coupled to the voltage and current reference circuit and to a power supply; and a voltage comparator (106), coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit. The voltage and current reference circuit includes a self-cascode MOSFET structure (SCM) (110) that produces a reference voltage. The power supply voltage monitoring circuit includes another SCM (140) that produces a monitor voltage, related to the power supply voltage. The reference voltage and the monitor voltage have a same behavior with changes in temperature, thereby allowing the trip point of the low voltage detector to minimally vary with temperature. The low voltage detector is disposed on an integrated circuit (101), and the transistors of the low voltage detector consist of only CMOS transistors.

Abstract: A bandgap voltage reference unit on an integrated circuit (101) includes a proportional-to-absolute-temperature (PTAT) current source (100) coupled to a bandgap voltage reference circuit (200) that includes a plurality of self-cascode MOSFET structures (201-204) that are cascaded together to form a PTAT voltage generator (205). The bandgap voltage reference circuit also includes a complementary-to-absolute-temperature (CTAT) device (260). A PTAT voltage from the PTAT voltage generator is added to a CTAT voltage from the CTAT device to produce an output voltage of the bandgap voltage reference unit, such that the output voltage is the bandgap voltage of the integrated circuit and such that the output voltage does not change with temperature.

Abstract: A low voltage detector (100) includes a voltage and current reference circuit (102); a power supply voltage monitor circuit (104), coupled to the voltage and current reference circuit and to a power supply; and a voltage comparator (106), coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit. The voltage and current reference circuit includes a self-cascode MOSFET structure (SCM) (110) that produces a reference voltage. The power supply voltage monitoring circuit includes another SCM (140) that produces a monitor voltage, related to the power supply voltage. The reference voltage and the monitor voltage have a same behavior with changes in temperature, thereby allowing the trip point of the low voltage detector to minimally vary with temperature. The low voltage detector is disposed on an integrated circuit (101), and the transistors of the low voltage detector consist of only CMOS transistors.

Abstract: A bandgap voltage reference unit on an integrated circuit (101) includes a proportional-to-absolute-temperature (PTAT) current source (100) coupled to a bandgap voltage reference circuit (200) that includes a plurality of self-cascode MOSFET structures (201-204) that are cascaded together to form a PTAT voltage generator (205). The bandgap voltage reference circuit also includes a complementary-to-absolute-temperature (CTAT) device (260). A PTAT voltage from the PTAT voltage generator is added to a CTAT voltage from the CTAT device to produce an output voltage of the bandgap voltage reference unit, such that the output voltage is the bandgap voltage of the integrated circuit and such that the output voltage does not change with temperature.