Patents by Inventor Edgardo Garcia Berrios
Edgardo Garcia Berrios has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230298847Abstract: An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A contiguous TiN layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the TiN layer.Type: ApplicationFiled: March 16, 2023Publication date: September 21, 2023Inventors: Yung-Ho Alex Chuang, Yinying Xiao-Li, Edgardo García Berríos, John Fielden, Lavinia Ghirardini, Masayoshi Nagao
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Patent number: 11715615Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.Type: GrantFiled: July 6, 2022Date of Patent: August 1, 2023Assignee: KLA CorporationInventors: Edgardo Garcia Berrios, J. Joseph Armstrong, Yinying Xiao-Li, John Fielden, Yung-Ho Alex Chuang
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Publication number: 20220336180Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.Type: ApplicationFiled: July 6, 2022Publication date: October 20, 2022Inventors: Edgardo Garcia Berrios, J. Joseph Armstrong, Yinying Xiao-Li, John Fielden, Yung-Ho Alex Chuang
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Patent number: 11424117Abstract: A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.Type: GrantFiled: May 17, 2021Date of Patent: August 23, 2022Assignee: KLA CorporationInventors: Yung-Ho Alex Chuang, Yinying Xiao-Li, Edgardo Garcia-Berrios, John Fielden
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Patent number: 11417492Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.Type: GrantFiled: September 14, 2020Date of Patent: August 16, 2022Assignee: KLA CorporationInventors: Edgardo Garcia Berrios, J. Joseph Armstrong, Yinying Xiao-Li, John Fielden, Yung-Ho Alex Chuang
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Publication number: 20210272791Abstract: A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.Type: ApplicationFiled: May 17, 2021Publication date: September 2, 2021Inventors: Yung-Ho Alex Chuang, Yinying Xiao-Li, Edgardo Garcia-Berrios, John Fielden
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Patent number: 11011366Abstract: A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.Type: GrantFiled: May 20, 2020Date of Patent: May 18, 2021Assignee: KLA CorporationInventors: Yung-Ho Alex Chuang, Yinying Xiao-Li, Edgardo Garcia-Berrios, John Fielden
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Publication number: 20210098222Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.Type: ApplicationFiled: September 14, 2020Publication date: April 1, 2021Inventors: Edgardo Garcia Berrios, J. Joseph Armstrong, Yinying Xiao-Li, John Fielden, Yung-Ho Alex Chuang
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Patent number: 10943760Abstract: An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.Type: GrantFiled: September 11, 2019Date of Patent: March 9, 2021Assignees: KLA Corporation, National Institute Of Advanced Industrial Science and TechnologyInventors: Yung-Ho Alex Chuang, Yinying Xiao-Li, Edgardo Garcia Berrios, John Fielden, Masayoshi Nagao
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Publication number: 20200388481Abstract: A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.Type: ApplicationFiled: May 20, 2020Publication date: December 10, 2020Inventors: Yung-Ho Alex Chuang, Yinying Xiao-Li, Edgardo Garcia-Berrios, John Fielden
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Patent number: 10141155Abstract: An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.Type: GrantFiled: May 5, 2017Date of Patent: November 27, 2018Assignee: KLA-Tencor CorporationInventors: Gildardo R. Delgado, Edgardo Garcia Berrios, Frances Hill, Rudy Garcia
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Publication number: 20180174794Abstract: An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.Type: ApplicationFiled: May 5, 2017Publication date: June 21, 2018Inventors: Gildardo R. Delgado, Edgardo Garcia Berrios, Frances Hill, Rudy Garcia
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Patent number: 9984846Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 ?m or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 ?m or less.Type: GrantFiled: July 22, 2016Date of Patent: May 29, 2018Assignee: KLA-Tencor CorporationInventors: William G. Schultz, Gildardo R. Delgado, Frances Hill, Edgardo Garcia Berrios, Rudy Garcia
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Publication number: 20180005791Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 ?m or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 ?m or less.Type: ApplicationFiled: July 22, 2016Publication date: January 4, 2018Inventors: William G. Schultz, Gildardo R. Delgado, Frances Hill, Edgardo Garcia Berrios, Rudy Garcia