Abstract: An integrated circuit (IC) device includes an interposer having a dielectric substrate having a first side, a second side, and an inner aperture, wherein a plurality of electrically conductive traces are on the first side. An IC die includes a topside semiconductor surface having active circuitry and a bottomside surface, wherein the topside semiconductor surface includes a plurality of bond pads, and is attached over the inner aperture onto the interposer. First wirebond interconnects couple respective bond pads to respective electrically conductive traces. A workpiece includes a top workpiece surface including a plurality of contact pads thereon attached to the first side of the interposer. Second interconnects couple respective conductive traces to respective contact pads on the workpiece.

Abstract: The invention provides apparatus and methods by which, in a stacked semiconductor chip package, a continuous electrical path may be provided among bond pads by way of one or more intermediate bond pad electrically isolated from its underlying surface.

Abstract: In accordance with the present invention, a system and method for increasing bump pad height in a flip chip assembly are provided. The method includes depositing a bump pad on a substrate and depositing a solder mask on the substrate to define an opening surrounding the bump pad. A resist material is then deposited on the substrate such that the resist material covers the bump pad and solder mask. The resist material is then etched to form a column-shaped opening above the bump pad, and a conductive material is deposited into the column-shaped opening. The remaining resist material may then be optionally removed, leaving behind a column of conductive material above the bump pad.