Patents by Inventor Edmund B. Kaminsky

Edmund B. Kaminsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a MESFET with a sloped MESA structure
    Patent number: 7655514
    Abstract: A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: February 2, 2010
    Assignee: Lockheed Martin Corporation
    Inventors: An-Ping Zhang, Larry B. Rowland, James W. Kretchmer, Jesse Tucker, Edmund B. Kaminsky
  • SiC metal semiconductor field-effect transistor
    Patent number: 7345309
    Abstract: A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: March 18, 2008
    Assignee: Lockheed Martin Corporation
    Inventors: An-Ping Zhang, Larry B. Rowland, James W. Kretchmer, Jesse Tucker, Edmund B. Kaminsky