Patents by Inventor Edmund G. Gerstner

Edmund G. Gerstner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor
    Patent number: 7763938
    Abstract: A transistor has a source electrode (22) on the opposite side of a semiconductor body layer (10) to a gate electrode (4) insulated from the body layer (10) by gate insulator (8). The source electrode (22) has a potential barrier to the semiconductor body layer (10), for example a Schottky barrier. At least one drain electrode (54) is also connected to the semiconductor body layer (10). A suitable source-drain voltage and gate voltage depletes the region of the semiconductor body layer adjacent to the source electrode (22), and then source-drain current is controlled by the gate voltage.
    Type: Grant
    Filed: July 29, 2003
    Date of Patent: July 27, 2010
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: John M. Shannon, Edmund G. Gerstner