Abstract: A method and system for improving Field Replacement Unit (FRU) isolation in memory sub-systems by monitoring Voltage Regulator Module (VRM) induced memory errors. A comparator compares the output voltage coming from the VRM to memory. If the comparator detects a VRM output voltage transient that is outside a rated threshold, then a counter is increased by one. If the counter exceeds a count threshold, a VRM error is posted. If a memory failure occurs within a predetermined period of time, then the VRM error pinpoints the VRM output voltage transient as being the likely cause of the memory failure.

Abstract: A method and system for improving Field Replacement Unit (FRU) isolation in memory sub-systems by monitoring Voltage Regulator Module (VRM) induced memory errors. A comparator compares the output voltage coming from the VRM to memory. If the comparator detects a VRM output voltage transient that is outside a rated threshold, then a counter is increased by one. If the counter exceeds a count threshold, a VRM error is posted. If a memory failure occurs within a predetermined period of time, then the VRM error pinpoints the VRM output voltage transient as being the likely cause of the memory failure.

Abstract: Aspects for improving signal quality on high speed, multi-drop busses are described. The aspects include coupling a source device directly to multiple load devices, wherein there are no resistance components coupled in series between the source device and the multiple load devices. The aspects further include providing a spacing arrangement for the multiple load devices, wherein negative reflections are delayed to minimize deleterious efforts from the negative reflections. Through the present invention, the modified version of a commonly used bus topology achieves extended voltage timing margins in a high speed, multi-drop bus in a straightforward and efficient manner.