Patents by Inventor Edmund Kaminsky

Edmund Kaminsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making GaN-based high electron mobility transistor
    Patent number: 7851284
    Abstract: A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.
    Type: Grant
    Filed: October 30, 2007
    Date of Patent: December 14, 2010
    Assignee: Lockheed Martin Corporation
    Inventors: An-Ping Zhang, James Kretchmer, Edmund Kaminsky, Jr.
  • GaN-based high electron mobility transistor and method for making the same
    Publication number: 20080124851
    Abstract: A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.
    Type: Application
    Filed: October 30, 2007
    Publication date: May 29, 2008
    Inventors: An-Ping Zhang, James Kretchmer, Edmund Kaminsky
  • SiC metal semiconductor field-effect transistors and methods for producing same
    Publication number: 20080096335
    Abstract: A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.
    Type: Application
    Filed: December 13, 2007
    Publication date: April 24, 2008
    Inventors: An-Ping Zhang, Larry Rowland, James Kretchmer, Jesse Tucker, Edmund Kaminsky
  • GaN-based high electron mobility transistor and method for making the same
    Publication number: 20060226442
    Abstract: A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.
    Type: Application
    Filed: April 7, 2005
    Publication date: October 12, 2006
    Inventors: An-Ping Zhang, James Kretchmer, Edmund Kaminsky
  • SIC metal semiconductor field-effect transistors and methods for producing same
    Publication number: 20060043379
    Abstract: A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.
    Type: Application
    Filed: August 31, 2004
    Publication date: March 2, 2006
    Inventors: An-Ping Zhang, Larry Rowland, James Kretchmer, Jesse Tucker, Edmund Kaminsky