Abstract: A measuring device for measuring parameters of a piezoelectric crystal onto which a thin film of material is deposited (under vacuum). The crystal includes two spaced-apart electrodes. A frequency generator is adapted to generate an oscillator signal at a specified output frequency. A measuring amplifier is adapted to apply the oscillator signal as a drive signal to one of the electrodes of the crystal and to provide a crystal output signal in response to the drive signal. A quadrature demodulator is adapted to down convert the crystal output signal and to provide an in-phase output signal and a quadrature output signal. A computation unit is adapted to determine one or more parameters of the crystal based on the in-phase output signal and the quadrature output signal. Furthermore, there is provided a corresponding measuring method as well as to thin-film deposition systems (including a vacuum chamber) with such a device and methods for controlling such systems.

Abstract: A gas ring for a PVD-source with a cathode having a target for material deposition. The gas ring includes an inner rim and an outer rim and at least one flange between the inner and the outer rim. The gas ring further includes: —a gas inlet; —gas openings arranged circumferentially in or near the inner rim; —at least one circumferential gas channel connected to the gas inlet and/or the gas openings; —a cooling duct.

Abstract: Whenever substrates are rotationally and continuously conveyed in a vacuum recipient around a common axis and past a magnetron sputter source, sputtering of the target, rotating around a central target axis, by the stationary magnetron plasma is adapted to the azimuthal extents radially differently spaced areas of the substrates become exposed to the target thereby improving homogeneity of deposited layer thickness on the substrates and ensuring that the complete sputter surface of the target is net-sputtered.

Abstract: A method of producing hydrogen ions includes generating a diode-type HF plasma PL. This allows to set or adjust the energy of ions output by the plasma source in an improved manner.

Abstract: In a vacuum treatment recipient, a plasma is generated between a first plasma electrode and a second plasma electrode so as to perform a vacuum plasma treatment of a substrate. To minimize at least one of the two plasma electrodes to be buried by a deposition of material resulting from the treatment process, that electrode is provided with a surface pattern of areas which do not contribute to the plasma electrode effect and of areas which are plasma electrode effective. The current path between the two electrodes is concentrated on the distinct areas which are plasma electrode effective, leading to an ongoing sputter- cleaning of these areas.

Abstract: Vacuum-treating a substrate or manufacturing a vacuum-treated substrate, including the steps: exposing a substrate in a vacuum chamber to a plasma environment, the plasma environment including a first plasma of a material deposition source and a second plasma of a non-deposition source; operating the plasma environment repeatedly between a first and a second state, the first state being defined by: a higher plasma supply power to the first plasma causing a higher material deposition rate and a lower plasma supply power delivered to the second plasma, the second state being defined by: a lower plasma supply power to the first plasma, compared with the higher plasma supply power to the first plasma and causing a lower material deposition rate and a higher plasma supply power to the second plasma, compared with the lower plasma supply power to the second plasma. Also, a vacuum deposition apparatus adapted to perform the method.