Patents by Inventor Edmund Sikorskii

Edmund Sikorskii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CVD tantalum compounds for FET gate electrodes
    Publication number: 20050250318
    Abstract: Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 m?cm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.
    Type: Application
    Filed: July 13, 2005
    Publication date: November 10, 2005
    Inventors: Vijay Narayanan, Fenton McFeely, Keith Milkove, John Yurkas, Matthew Copel, Paul Jamison, Roy Carruthers, Cyril Cabral, Edmund Sikorskii, Elizabeth Duch, Alessandro Callegari, Sufi Zafar, Kazuhito Nakamura
  • CVD tantalum compounds for FET get electrodes
    Publication number: 20050104142
    Abstract: Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 m?cm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.
    Type: Application
    Filed: November 13, 2003
    Publication date: May 19, 2005
    Inventors: Vijav Narayanan, Fenton McFeely, Keith Milkove, John Yurkas, Matthew Copel, Paul Jamison, Roy Carruthers, Cyril Cabral, Edmund Sikorskii, Elizabeth Duch, Alessandro Callegari, Sufi Zafar, Kazuhito Nakamura