Abstract: The invention relates to a crystal fiber, a Raman spectrometer using the same and a inspection method thereof. The crystal fiber comprises a sapphire crystal is doped with two transition metals having different concentrations. An excitation light beam at a specific wavelength can propagate along the crystal fiber to generate a narrow-band light beam and a wide-band light beam to project on a specimen. Raman scattered light is emitted from the specimen. The wavelength of the Raman scattered light falls within the wavelength range of the wide-band light beam so that the wide-band light beam is enhanced at some characteristic wavelengths to facilitate Raman spectroscopy.

Abstract: The invention relates to a crystal fiber, a Raman spectrometer using the same and a inspection method thereof. The crystal fiber comprises a sapphire crystal is doped with two transition metals having different concentrations. An excitation light beam at a specific wavelength can propagate along the crystal fiber to generate a narrow-band light beam and a wide-band light beam to project on a specimen. Raman scattered light is emitted from the specimen. The wavelength of the Raman scattered light falls within the wavelength range of the wide-band light beam so that the wide-band light beam is enhanced at some characteristic wavelengths to facilitate Raman spectroscopy.

Abstract: Methods and apparatus, including computer program products, for recording and replaying audio and video programs. A device includes a video input controller, a video output controller, a command interface, a network adapter, and control circuitry. The video input controller receives an audiovisual program. The video output controller is operable to output a video signal representing the audiovisual program. The command interface is operable to receive input requesting that the audiovisual program be recorded. The network adapter is operable to connect the device to a data communication network, where the device is addressable over the data communication network through the network adapter. The control circuitry can receive the input requesting that the audiovisual program be recorded. The control circuitry can cause the requested audiovisual program to be transmitted to a remote storage device over the data communication network through the network adapter and to be recorded at the remote storage device.

Abstract: An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.

Abstract: An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.

Abstract: The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the boundaries between conducting portions and between the gate and the conducting portions.

Abstract: Disclosed is a method of manufacturing semiconductor devices including a step of irradiating the devices to alter the turnoff and forward drop characteristics thereof. The irradiation is carried out at a temperature above 100.degree. C, and preferably in the range of 150.degree. to 375.degree. C. No post irradiation annealing step is required.

Abstract: Disclosed is a method of bonding metals to substrates such as ceramics or metals. A bonding agent forms a eutectic alloy with the metal to provide bonding. Several methods of supplying the bonding agent to the system are disclosed. However, regardless of which method of introducing the bonding agent into the system is employed, the quantity of the bonding agent is carefully controlled so that the compound in the region of the bond is hypoeutectic. To form the bond, the metal and the substrate are placed adjacent each other and the bonding agent is introduced into the system. The system is then heated to a temperature between the eutectic temperature and the melting point of the metal for a preselected time. The system is then cooled to form a bond. The heating is carried out in an inert atmosphere or a vacuum.