Abstract: An integration structure for connecting a plurality of semiconductor devices, includes a substrate, a first face and a second face for receiving the semiconductor devices. At the first surface, at least one routing level includes at least one non-superconducting conductive routing track of a conductive material; and at least one superconducting routing track of a superconducting material. At the second surface, at least one routing level includes at least one non-superconducting conductive routing track of a conductive material; and at least one superconducting routing track of a superconducting material. The integration structure includes at least one non-superconducting conductive via connecting a non-superconducting conductive routing track of the first face to a non-superconducting conductive track of the second face and/or at least one superconducting via connecting a superconducting routing track of the first face to a superconducting track of the second face.

Abstract: A microoptical device, and a method for forming cavities of the microoptical device, including: (a) forming, on the planar surface of a support substrate (10), a layer (12) of a sacrificial material, b) forming walls (6) of said cavities, the bottom of said cavities (4) being formed by said layer of sacrificial material, c) conformally depositing a layer (30) of absorbing, on tops (60) of the walls, on flanks (61, 62) of the walls, and on the bottom (4?) of the cavities, d) etching the sacrificial layer (12), and removing the material of this layer and the material of the layer (30) of absorbing material being present at the bottom of the cavities (4).

Abstract: A method is disclosed for forming cavities (4) of a microoptical device, including: a) forming, on the planar surface of a support substrate (10), a layer (12) of a sacrificial material, b) forming walls (6) of said cavities, the bottom of said cavities (4) being formed by said layer of sacrificial material, c) conformally depositing a layer (30) of absorbing, on tops (60) of the walls, on flanks (61, 62) of the walls, and on the bottom (4?) of the cavities, d) etching the sacrificial layer (12), and removing the material of this layer and the material of the layer (30) of absorbing material being present at the bottom of the cavities (4).