Abstract: In one embodiment, a current sensing circuit corrects for the transient and steady state temperature measurement errors due to physical separation between a resistive sense element and a temperature sensor. The sense element has a temperature coefficient of resistance. The voltage across the sense element and a temperature signal from the temperature sensor are received by processing circuitry. The processing circuitry determines a power dissipated by the sense element, which may be instantaneous or average power, and determines an increased temperature of the sense element. The resistance of the sense element is changed by the increased temperature, and this derived resistance Rs is used to calculate the current through the sense element using the equation I=V/R or other related equation. The process is iterative to continuously improve accuracy and update the current.

Abstract: In one embodiment, a current sensing circuit corrects for the transient and steady state temperature measurement errors due to physical separation between a resistive sense element and a temperature sensor. The sense element has a temperature coefficient of resistance. The voltage across the sense element and a temperature signal from the temperature sensor are received by processing circuitry. The processing circuitry determines a power dissipated by the sense element, which may be instantaneous or average power, and determines an increased temperature of the sense element. The resistance of the sense element is changed by the increased temperature, and this derived resistance Rs is used to calculate the current through the sense element using the equation I=V/R or other related equation. The process is iterative to continuously improve accuracy and update the current.

Abstract: An apparatus comprising a first plurality of parallel switches and a second plurality of parallel switches. The first plurality of parallel switches may be configured to control a voltage on a first output pin. The second plurality of parallel switches may be configured to control a voltage on a second output pin. The first and second pluralities of parallel switches may be configured to provide rise time control of a differential waveform and be driven by a phased data signal.

Abstract: An apparatus comprising a device and a resistor. The device generally comprises (i) a gate configured to receive an input voltage, (ii) a drain coupled to a first supply voltage, and (iii) a source coupled to an output. The resistive element is generally coupled between the source and a second supply voltage. The apparatus generally provides voltage tolerance between the input voltage and the output.

Abstract: A high speed input buffer of the type having a first connection in electrical communication with a positive voltage source and a second connection in electrical communication with a negative voltage source. A first native transistor is functionally disposed between the positive voltage source and the first connection. A first contact of the first native transistor is electrically connected to the positive voltage source and a second contact of the first native transistor is electrically connected to the first connection. A second native transistor is functionally disposed between the negative voltage source and the second connection. A first contact of the second native transistor is electrically connected to the negative voltage source and a second contact of the second native transistor is electrically connected to the second connection.

Abstract: A high speed input buffer of the type having a first connection in electrical communication with a positive voltage source and a second connection in electrical communication with a negative voltage source. A first native transistor is functionally disposed between the positive voltage source and the first connection. A first contact of the first native transistor is electrically connected to the positive voltage source and a second contact of the first native transistor is electrically connected to the first connection. A second native transistor is functionally disposed between the negative voltage source and the second connection. A first contact of the second native transistor is electrically connected to the negative voltage source and a second contact of the second native transistor is electrically connected to the second connection.