Abstract: A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 .mu.m, the concentration of neutral atoms in the n-region is from 1.5.times.10.sup.18 to 5.times.10.sup.18 cm.sup.-.sup.3 and the thickness of the compensated region disposed between said two regions containing a luminescence activator, has a thickness of 0.5-1.2 .mu.m.A method for production of a semiconductor digital display device whereby the p-n junction is formed by introducing an impurity which has a high surface concentration and a low diffusion coefficient in silicon carbide and then a luminescence activator is introduced from the same side to a depth exceeding by 3-4 times the diffusion depth.The device features a high resistance of the diffused region adjoining the luminescence contacts.

Abstract: A semiconductor light source using nitrogen-doped n-type silicon carbide with a p-n junction electroluminescent within the visible region of the spectrum, and with a p-layer doped with an acceptor impurity, wherein the uncompensated majority donor concentration in said silicon carbide is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3, the p-layer is doped with an acceptor impurity with a minimum activation energy and with a solubility in silicon carbide of about 10.sup.19 to 10.sup.20 cm.sup..sup.-3, the uncompensated donor concentration in the base layer is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3 and a central layer, 0.05 to 1 micron thick, located between the p-layer and the base layer is doped with luminescence activators of donor and acceptor types to a concentration of 0.1 .times. 10.sup.18 to 2 .times. 10.sup.18 cm.sup..sup.-3 and has a resistivity greater than the resistivity of the base layer by at least three orders of magnitude.