Abstract: A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

Abstract: Method for producing a substrate includes establishing a plasma discharge with a locally inhomogeneous density distribution and exposing the substrate to the inhomogeneously density-distributed plasma discharge. The distribution is established by establishing a specified relative movement of the inhomogeneous density distribution and of the substrate and establishing a specified time variation of an electric power signal supplying the discharge and/or of an optionally provided further electric signal which connects the substrate to bias voltage. When the electric power signal or further electric signal is an AC signal, the specified time variation of the signal addresses its modulation and the method includes setting the variation and the movement.

Abstract: Method for producing a substrate includes establishing a plasma discharge with a locally inhomogeneous density distribution and exposing the substrate to the inhomogeneously density-distributed plasma discharge. The distribution is established by establishing a specified relative movement of the inhomogeneous density distribution and of the substrate and establishing a specified time variation of an electric power signal supplying the discharge and/or of an optionally provided further electric signal which connects the substrate to bias voltage. When the electric power signal or further electric signal is an AC signal, the specified time variation of the signal addresses its modulation and the method includes setting the variation and the movement.

Abstract: In order to produce substrate surfaces with a given two-dimensional surface distribution arising from a treatment using a vacuum treatment process, an inhomogeneous plasma (5) with a density distribution is generated and moved relative to the substrate (9) with a given movement.

Abstract: In order to produce substrate surfaces with a given two-dimensional surface distribution arising from a treatment using a vacuum treatment process, an inhomogeneous plasma (5) with a density distribution is generated and moved relative to the substrate (9) with a given movement.

Abstract: A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

Abstract: A method and apparatus for producing an information carrier which has at least two solid material interfaces at which information is, or may be applied and where the information is stored by local modulation of at least one characteristic of the solid material. Reflection of electromagnetic radiation at the interface depends on this characteristic. The method and apparatus applies at least one intermediate layer between the two solid material interfaces. The intermediate layer transmits the radiation and is at least predominantly made of either SixCy or SivNw, or both.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A method for producing a layer of a metal oxide with optical losses of 15 dB/cm, at most, for light with a wavelength of 633 nm, includes depositing the layer using magnetic field enhanced reactive DC-sputtering, from a metallic target.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A vacuum treatment apparatus (FIG. 13) includes a vacuum recipient or chamber (3) for containing an atmosphere. A mechanism (50,52) for generating electrical charge carriers in the atmosphere is provided in the recipient, the electrical charge carriers being of the type that form electrically isolating material. The recipient also contains a work piece carrier arrangement (1) and at least two electroconductive surfaces (2a, 2b) which are mutually electrically isolated from each other. A DC power supply (8) is operationally connected to the electroconductive surfaces by respective electrical conductors with an inductor (L.sub.66) in one of the conductors. A parallel switching arrangement is connected between the electrical conductors to control a current path between the conductors.

Abstract: A target arrangement for a sputtering apparatus has a circular plate target with either a circumferential protrusion or recess which is symmetrical about a central plane through the target, the plane being perpendicular to the central axis of the target and located halfway between the top and bottom surfaces of the target. Each surface of the target is composed primarily of sputtering material. A magnetron for use with the target arrangement for easy changing of the target to sputter using the opposite surface of the target is disclosed. A process for using the target arrangement and magnetron assembly to sputter a work piece is also disclosed.

Abstract: An information carrier has at least two solid material interfaces at which information is, or may be applied and where the information is stored by local modulation of at least one characteristic of the solid material. Reflection of electromagnetic radiation at the interface depends on this characteristic. The information carrier further includes at least one intermediate layer between the two solid material interfaces. The intermediate layer transmits the radiation and is at least predominantly made of either Si.sub.x C.sub.y or Si.sub.v N.sub.w, or both.

Abstract: A vacuum treatment apparatus eliminate arcing in a vacuum recipient for containing an atmosphere and having a mechanism for generating electrical charge carriers in the atmosphere. A workpiece carrier arrangement and at least two electro-conductive surfaces are in the recipient and a generator unit having an output is connected to the electro-conductive surfaces. The generator includes a DC generator with an output, and a controlled adjusting unit with an input connected to the output of the DC generator. The controlled adjusting unit generates a first output signal in dependency on an output signal of the DC generator during first timespans, and a second output signal during second timespans. The unit may also have a time-controlled discharge or charge current loop connected from one of the electro-conductive surfaces to the other, with a higher ohmic resistance during the first timespans and a lower ohmic resistance during the second timespans.

Abstract: At least one gas inlet arrangement with several gas outlet openings supplies a working gas and/or a reactive gas to a chamber through a line system with at least one gas source, and at a given gas pressure. The chamber is provided for the treatment of substrates, such as, in particular, by physical or chemical coating processes or by etching processes. The resistance coefficients of the outlet openings are so dimensioned with respect to the sites in the line system at the given gas pressure, that at each outlet opening, a controlled gas flow exits.

Abstract: An apparatus for performing the method comprising a vacuum treatment chamber containing a target of ohmic conductive material. The target and workpiece are supported by suitable electrodes. Superimposed DC and AC power is applied to generate a glow discharge in the chamber in which the target is sputtered. Particles sputtered off the target react with a reactive gas in the space between the target and workpiece and the reaction product is deposited upon the workpiece. The operating parameters of the system are selected so that sputtering and deposition are performed in an unstable transition mode between a metallic and a reactive mode whereby particles are deposited on the workpiece to form a layer on the workpiece of lower conductivity than the target material. A feedback arrangement is preferably utilized to maintain operation with the aforesaid unstable transition mode.

Abstract: An optical layer and arrangements with such a layer are proposed which is predominantly of Ta.sub.2 O.sub.5 and having an absorption constant for ultra-violet light less than 0.0075 for light of 308 nm. Such a layer is produced by ion-beam sputtering of a target which target is predominantly made of Ta.sub.2 O.sub.5.

Abstract: A method and apparatus for performing the method comprising a vacuum treatment chamber containing a target of ohmic conductive material. The target and a workpiece are supported by suitable electrodes. Superimposed DC and AC power is applied to the target to generate a glow discharge in the chamber in which the target is sputtered. Particles sputtered off the target react with a reactive gas in the space between the target and workpiece and the reaction product is deposited upon the workpiece. The operating parameters of the system are selected so that sputtering and deposition are performed in an unstable transition mode between a metallic and a reactive mode whereby particles are deposited on the workpiece to form a layer on the workpiece of lower conductivity than the target material. A feedback arrangement is preferably utilized to maintain operation with the aforesaid unstable transition mode.