Abstract: Provided is a low carbon defect copper-manganese (CuMn) sputtering target and systems and methods for producing the same. The low carbon defect CuMn sputtering target may comprise of copper with a purity of at least about 99.9999%, manganese with a purity of about 99.9% to about 99.999%, and one or more active elements comprising of oxygen (O) at about 100 parts per million (ppm) to about 4000 ppm, iron (Fe) at about 5 parts per billion (ppb) to about 100 ppm, sulfur (S) at about 5 ppm to about 400 ppm, hydrogen (H) at about 1 ppm to about 10 ppm, and chromium (Cr) at about 5 ppb to about 200 ppm, wherein the manganese has a compositional range of up to about 5 wt %.

Abstract: Provided are copper and copper alloy sputtering targets and sputtering target assemblies, including copper-sulfur sputtering targets, and systems and methods thereof. The copper and copper alloy sputtering targets, including copper-sulfur sputtering targets may have one or more (or all) of the following properties: high purity, uniform composition and distribution, increased or requisite mechanical stability to provide joining mechanisms, and the like. In an embodiment, the sulfur-doped copper alloy compositions and sputtering targets may have a purity of 99.999 wt % or more and/or a uniform composition of sulfur up to 5 wt %.