Patents by Inventor Edvard Kälvesten

Edvard Kälvesten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9607915
    Abstract: Method of making through-substrate-vias in glass substrates includes providing a first substrate on which a plurality of needles protruding vertically from the substrate are made; providing a second substrate made of glass; locating the substrates adjacent each other such that the needles on the first substrate face the second substrate; applying heat to a temperature where the glass softens, by heating the glass or the needle substrate or both; applying a force such that the needles on the first substrate penetrate into the glass to provide impressions in the glass; and finally, removing the first substrate and providing material filling the impressions in the second substrate made of glass. A device includes a silicon substrate having a cavity in which a MEMS component is accommodated, and a cap wafer made of a material having a low dielectric constant, and through substrate vias of metal, is bonded to the silicon substrate.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: March 28, 2017
    Assignee: SILEX MICROSYSTEMS AB
    Inventors: Ulf Erlesand, Edvard Kälvesten
  • Patent number: 9362139
    Abstract: A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer.
    Type: Grant
    Filed: November 19, 2009
    Date of Patent: June 7, 2016
    Assignee: Silex Microsystems AB
    Inventors: Thorbjörn Ebefors, Edvard Kälvesten, Tomas Bauer
  • Patent number: 9312217
    Abstract: The invention relates to a method of making a starting substrate wafer for semiconductor engineering having electrical wafer through connections (140; 192). It comprises providing a wafer (110; 150) having a front side and a back side and having a base of low resistivity silicon and a layer of high resistivity material on the front side. On the wafer there are islands of low resistivity material in the layer of high resistivity material. The islands are in contact with the silicon base material. Trenches are etched from the back side of the wafer but not all the way through the wafer to provide insulating enclosures defining the wafer through connections (140; 192). The trenches are filled with insulating material. Then the front side of the wafer is grinded to expose the insulating material to create the wafer through connections.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: April 12, 2016
    Assignee: Silex Microsystems AB
    Inventors: Edvard Kälvesten, Tomas Bauer, Thorbjörn Ebefors
  • Publication number: 20150279756
    Abstract: Method of making through-substrate-vias in glass substrates includes providing a first substrate on which a plurality of needles protruding vertically from the substrate are made; providing a second substrate made of glass; locating the substrates adjacent each other such that the needles on the first substrate face the second substrate; applying heat to a temperature where the glass softens, by heating the glass or the needle substrate or both; applying a force such that the needles on the first substrate penetrate into the glass to provide impressions in the glass; and finally, removing the first substrate and providing material filling the impressions in the second substrate made of glass. A device includes a silicon substrate having a cavity in which a MEMS component is accommodated, and a cap wafer made of a material having a low dielectric constant, and through substrate vias of metal, is bonded to the silicon substrate.
    Type: Application
    Filed: October 31, 2013
    Publication date: October 1, 2015
    Inventors: Ulf Erlesand, Edvard Kälvesten
  • Patent number: 8729713
    Abstract: A vent hole precursor structure (26) in an intermediate product for a semi-conductor device has delicate structures (27, 28), and said intermediate product has a cavity (21) with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer (20) in which there is formed a depression (21). The first wafer is bonded to a second wafer (22) comprising a device layer (23) from which the structures (27, 28) are to be made by etching. A hole or groove (26) having a predefined depth extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) to form the structures (27, 28).
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: May 20, 2014
    Assignee: Silex Microsystems AB
    Inventors: Thorbjörn Ebefors, Edvard Kälvesten, Peter Agren, Niklas Svedin
  • Patent number: 8637351
    Abstract: The invention relates in a general aspect to a method of making vertically protruding elements on a substrate, said elements having a tip comprising at least one inclined surface and an elongated body portion extending between said substrate and said tip. The method comprises an anisotropic, crystal plane dependent etch forming said inclined surface(s); and an anisotropic, non crystal plane dependent etch forming said elongated body portion; combined with suitable patterning processes defining said protruding elements to have a predetermined base geometry.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: January 28, 2014
    Assignee: Silex Microsystem AB
    Inventors: Edvard Kälvesten, Thorbjörn Ebefors, Thierry Corman
  • Patent number: 8630033
    Abstract: A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: January 14, 2014
    Assignee: Silex Microsystems AB
    Inventors: Thorbjörn Ebefors, Edvard Kälvesten, Peter Agren, Niklas Svedin, Thomas Ericson
  • Patent number: 8592981
    Abstract: The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: November 26, 2013
    Assignee: Silex Microsystems AB
    Inventors: Thorbjörn Ebefors, Edvard Kälvesten, Peter Ågren, Niklas Svedin
  • Patent number: 8308960
    Abstract: The invention relates in a general aspect to a method of making vertically protruding elements on a substrate, said elements having a tip comprising at least one inclined surface and an elongated body portion extending between said substrate and said tip. The method comprises an anisotropic, crystal plane dependent etch forming said inclined surface(s); and an anisotropic, non crystal plane dependent etch forming said elongated body portion; combined with suitable patterning processes defining said protruding elements to have a predetermined base geometry.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: November 13, 2012
    Assignee: Silex Microsystems AB
    Inventors: Edvard Kälvesten, Thorbjörn Ebefors, Thierry Corman
  • Publication number: 20120267773
    Abstract: A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer.
    Type: Application
    Filed: November 19, 2009
    Publication date: October 25, 2012
    Applicant: SILEX Microsystems AB
    Inventors: Thorbjörn Ebefors, Edvard Kälvesten, Tomas Bauer
  • Publication number: 20120126392
    Abstract: The invention relates in a general aspect to a method of making vertically protruding elements on a substrate, said elements having a tip comprising at least one inclined surface and an elongated body portion extending between said substrate and said tip. The method comprises an anisotropic, crystal plane dependent etch forming said inclined surface(s); and an anisotropic, non crystal plane dependent etch forming said elongated body portion; combined with suitable patterning processes defining said protruding elements to have a predetermined base geometry.
    Type: Application
    Filed: October 21, 2011
    Publication date: May 24, 2012
    Applicant: SILEX MICROSYSTEMS AB
    Inventors: Edvard Kälvesten, Thorbjörn Ebefors, Thierry Corman
  • Publication number: 20120097733
    Abstract: A sealing and bonding material structure for joining semiconductor wafers having monolithically integrated components. The sealing and bonding material are provided in strips forming closed loops. There are provided at least two concentric sealing strips on one wafer. The strips are laid out so as to surround the component(s) on the wafers to be sealed off when wafers are bonded together. The material in the strips is a material bonding the semiconductor wafers together and sealing off the monolithically integrated components when subjected to force and optionally heating. A monolithically integrated electrical and/or mechanical and/or fluidic and/or optical device including a first substrate and a second substrate, bonded together with the sealing and bonding structure, and a method of providing a sealing and bonding material structure on at least one of two wafers and applying a force and optionally heat to the wafers to join them are described.
    Type: Application
    Filed: January 5, 2012
    Publication date: April 26, 2012
    Applicant: SILEX MICROSYSTEMS AB
    Inventors: Thorbjörn EBEFORS, Edvard KÄLVESTEN, Niklas SVEDIN, Anders ERIKSSON
  • Publication number: 20120018898
    Abstract: The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
    Type: Application
    Filed: December 23, 2009
    Publication date: January 26, 2012
    Applicant: SILEX MICROSYSTEMS AB
    Inventors: Thorbjörn Ebefors, Edvard Kälvesten, Peter Agren, Niklas Svedin
  • Publication number: 20120018852
    Abstract: A vent hole precursor structure (26) in an intermediate product for a semi-conductor device has delicate structures (27, 28), and said intermediate product has a cavity (21) with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer (20) in which there is formed a depression (21). The first wafer is bonded to a second wafer (22) comprising a device layer (23) from which the structures (27, 28) are to be made by etching. A hole or groove (26) having a predefined depth extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) to form the structures (27, 28).
    Type: Application
    Filed: July 28, 2011
    Publication date: January 26, 2012
    Applicant: SILEX MICROSYSTEMS AB
    Inventors: Thorbjörn Ebefors, Edvard Kälvesten, Peter Agren, Niklas Svedin
  • Publication number: 20120019886
    Abstract: A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
    Type: Application
    Filed: June 22, 2011
    Publication date: January 26, 2012
    Applicant: SILEX MICROSYSTEMS AB
    Inventors: Thorbjörn Ebefors, Edvard Kälvesten, Peter Agren, Niklas Svedin, Thomas Ericson
  • Publication number: 20100006536
    Abstract: The invention relates in a general aspect to a method of making vertically protruding elements on a substrate, said elements having a tip comprising at least one inclined surface and an elongated body portion extending between said substrate and said tip. The method comprises an anisotropic, crystal plane dependent etch forming said inclined surface(s); and an anisotropic, non crystal plane dependent etch forming said elongated body portion; combined with suitable patterning processes defining said protruding elements to have a predetermined base geometry.
    Type: Application
    Filed: December 14, 2006
    Publication date: January 14, 2010
    Inventors: Edvard Kälvesten, Thorbjörn Ebefors, Thierry Corman
  • Patent number: 7560802
    Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.
    Type: Grant
    Filed: March 22, 2004
    Date of Patent: July 14, 2009
    Assignee: Silex Microsystems AG
    Inventors: Edvard Kälvesten, Thorbjörn Ebefors, Niklas Svedin, Pelle Rangsten, Tommy Schönberg
  • Patent number: 7172911
    Abstract: A method of making a deflectable, free hanging micro structure having at least one hinge member, the method includes the steps of providing a first sacrificial wafer having a single crystalline material constituting material forming the micro structure. A second semiconductor wafer including necessary components for forming the structure in cooperation with the first wafer is provided. Finite areas of a structured bonding material is provided, on one or both of the wafers at selected locations, the finite areas defining points of connection for joining the wafers. The wafers are bonded using heat and optionally pressure. Sacrificial material is etched away from the sacrificial wafer, patterning the top wafer by lithography is performed to define the desired deflectable microstructures having hinges, and subsequently silicon etch to make the structures.
    Type: Grant
    Filed: February 14, 2003
    Date of Patent: February 6, 2007
    Assignee: Silex Microsystems AB
    Inventors: Edvard Kälvesten, Thorbjörn Ebefors, Niklas Svedin, H{dot over (a)}kan Westin
  • Patent number: 7067345
    Abstract: A method of combining components to form an integrated device, wherein the components are provided on a first sacrificial wafer, and a second non-sacrificial wafer, respectively. The sacrificial wafer carries a first plurality of components and the non-sacrificial wafer carries a second plurality of components. The wafers are bonded together with an intermediate bonding material. Optionally the sacrificial wafer is thinned to a desired level. The components of the sacrificial wafer are electrically interconnected to the component(s) on the non-sacrificial wafer. Finally, optionally the intermediate bonding material is stripped away.
    Type: Grant
    Filed: January 17, 2001
    Date of Patent: June 27, 2006
    Inventors: Edvard Kälvesten, Göran Stemme, Frank Niklaus
  • Patent number: 7017420
    Abstract: An entirely surface micromachined free hanging strain-gauge pressure sensor is disclosed. The sensing element consists of a 80 ?m long H-shaped double ended supported force transducing beam (16). The beam is located beneath and at one end attached to a square polysilicon diaphragm (14) and at the other end to the cavity edge. The sensor according to the invention enables a combination of high pressure sensitivity and miniature chip size as well as good environmental isolation. The pressure sensitivity for the sensor with a H-shaped force transducing beam, 0.4 ?m thick was found to be 5 ?V/V/mmHg.
    Type: Grant
    Filed: June 7, 2002
    Date of Patent: March 28, 2006
    Assignees: Silex Microsystems AB
    Inventors: Edvard Kälvesten, Patrik Melv{dot over (a)}s, Göran Stemme