Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as. e.g., organic photovoltaic devices.

Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Abstract: The present invention relates to carbon nanostructure compositions such as single walled carbon nanotubes (SWCNT), and methods for purification thereof, such as separation by their electronic types (e.g., primarily semiconductor enrichment). The type separated, semiconducting SWCNTs, can be used in many downstream applications such as printed electronics, sensors, optoelectronics and solar energy conversion, among other applications.

Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Abstract: Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Abstract: Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.

Abstract: The invention relates to novel fullerene derivatives, to methods for their preparation and educts or intermediates used therein, to mixtures and formulations containing them, to the use of the fullerene derivatives, mixtures and formulations as organic semiconductors in, or for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising, or being prepared from, these fullerene derivatives, mixtures or formulations.

Abstract: The invention relates to fullerene derivatives of formula I, to mixtures and formulations containing them, to the use of the fullerene derivatives, mixtures and formulations as organic semiconductors in, or for the preparation of electronic devices, especially organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to electronic devices comprising, or being prepared from, these fullerene derivatives, mixtures or formulations.

Abstract: The invention relates to improved fullerene derivatives, to methods for their synthesis and any educts or intermediates used in such methods, to compositions and formulations containing fullerene derivatives, to the use of the fullerene derivatives, compositions and formulations in, or for the preparation of, organic electronic (OE) devices like for example organic photovoltaic (OPV) devices or organic photodetectors (OPD), and to OE, OPV and OPD devices comprising, or being prepared from, these fullerene derivatives, compositions or formulations.

Abstract: [6,6]-Phenyl C71 butyric acid derivatives (C70-PCBR3) having a selectivity of greater than 95 wt % of the ?-isomer are provided by reacting fullerene C70 with a dialkyl sulfonium tetrafluoroborate having the formula:

Abstract: Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.

Abstract: [6,6]-Phenyl C71 butyric acid derivatives (C70-PCBR3) having a selectivity of greater than 95 wt % of the ?-isomer are provided by reacting fullerene C70 with a dialkyl sulfonium tetrafluoroborate having the formula:

Abstract: The invention relates to improved fullerene derivatives, to methods for their synthesis and any educts or intermediates used in such methods, to compositions and formulations containing fullerene derivatives, to the use of the fullerene derivatives, compositions and formulations in, or for the preparation of, organic electronic (OE) devices like for example organic photovoltaic (OPV) devices or organic photodetectors (OPD), and to OE, OPV and OPD devices comprising, or being prepared from, these fullerene derivatives, compositions or formulations.

Abstract: The invention relates to fullerene derivatives of formula I, to mixtures and formulations containing them, to the use of the fullerene derivatives, mixtures and formulations as organic semiconductors in, or for the preparation of electronic devices, especially organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to electronic devices comprising, or being prepared from, these fullerene derivatives, mixtures or formulations.

Abstract: The invention relates to novel fullerene derivatives, to methods for their preparation and educts or intermediates used therein, to mixtures and formulations containing them, to the use of the fullerene derivatives, mixtures and formulations as organic semiconductors in, or for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising, or being prepared from, these fullerene derivatives, mixtures or formulations.