Patents by Inventor Edward Aloys Gerard Hamers

Edward Aloys Gerard Hamers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing inorganic/organic films
    Patent number: 8178170
    Abstract: The present invention describes a method for applying a hybrid coating to a substrate. A coating according to the invention is formed by an inorganic component and an organic component. As a result, this coating has the hybrid character whereby the advantages of inter alia hardness are combined with flexibility. The invention also describes a device for the manufacture of a hybrid coating.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: May 15, 2012
    Assignee: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
    Inventors: Joannes Leonard Linden, Gregory Robert Alcott, Edward Aloys Gerard Hamers, Mauritius Cornelis Maria van de Sanden
  • Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
    Patent number: 7160809
    Abstract: In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: January 9, 2007
    Assignee: Technische Universiteit
    Inventors: Edward Aloys Gerard Hamers, Arno Hendrikus Marie Smets, Mauritius Cornelius Maria Van De Sanden, Daniel Cornelis Schram
  • Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
    Publication number: 20040097056
    Abstract: In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.
    Type: Application
    Filed: September 29, 2003
    Publication date: May 20, 2004
    Inventors: Edwards Aloys Gerard Hamers, Arno Hendrikus Marie Smets, Mauritius Cornelius Maria Van De Sanden, Dani?euml;l Cornelis Schram