Abstract: A chemical vapor deposition apparatus for depositing films or coatings on semiconductor substrates. Substrates are supported within an air tight reactor and heated to a predetermined reaction temperature. A manifold disposed within the reactor, and having a plurality of openings therein, receives one or more reactive vapors and evenly distributes the vapors through the openings in the vicinity of the substrates, such that the vapors react at the substrate surfaces and a film or coating is deposited thereon. One or more cooling tubes substantially envelope the manifold, thereby maintaining the manifold at a temperature less than at least the reaction temperature such that the vapors do not prematurely react within the manifold. Hence, films and coatings are prevented from forming within the manifold, and sufficient unreacted vapors are supplied to the substrate to effect a satisfactory coating or film thereon.

Abstract: A planarizing process for producing a passivation or insulating layer immediately underlying an upper metallized layer on the surface of an integrated circuit having very large radius of curvature steps, thus providing a reliable base for the metallized layer. The process is comprised of the steps of depositing and defining first metal conductors on the surface of an integrated circuit, depositing a first dielectric layer over the surface of the integrated circuit including the conductors, the dielectric layer being comprised of material selected from the group comprised of silicon dioxide and silicon nitride, depositing and polymerizing a layer of negative isoprene resist over the surface of the dielectric layer, plasma etching the surface of the isoprene and dielectric layers to a predetermined thickness over the metal conductors in an atmosphere of CF.sub.