Patents by Inventor Edward C. Eisner

Edward C. Eisner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7858955
    Abstract: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: December 28, 2010
    Assignee: Axcelis Technologies, Inc.
    Inventors: Shu Satoh, Edward C. Eisner, Manny Sieradzki
  • Publication number: 20100155623
    Abstract: Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.
    Type: Application
    Filed: December 18, 2008
    Publication date: June 24, 2010
    Applicant: Axcelis Technologies, Inc
    Inventor: Edward C. Eisner
  • Publication number: 20090321657
    Abstract: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.
    Type: Application
    Filed: June 25, 2008
    Publication date: December 31, 2009
    Applicant: Axcelis Technologies, Inc.
    Inventors: Shu Satoh, Edward C. Eisner, Manny Sieradzki
  • Patent number: 7615763
    Abstract: A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: November 10, 2009
    Assignee: Axcelis Technologies, Inc.
    Inventors: Bo H. Vanderberg, Robert D. Rathmell, Edward C. Eisner
  • Patent number: 7589333
    Abstract: An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: September 15, 2009
    Assignee: Axcelis Technologies, Inc.
    Inventors: Michael A. Graf, Edward C. Eisner, William F. DiVergilio, Daniel R. Tieger
  • Patent number: 7566886
    Abstract: An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed.
    Type: Grant
    Filed: August 14, 2006
    Date of Patent: July 28, 2009
    Assignee: Axcelis Technologies, Inc.
    Inventors: Edward C. Eisner, Bo H. Vanderberg
  • Patent number: 7550751
    Abstract: One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
    Type: Grant
    Filed: April 9, 2007
    Date of Patent: June 23, 2009
    Assignee: Axcelis Technologies, Inc.
    Inventors: Victor M. Benveniste, Edward C. Eisner, Bo H. Vanderberg
  • Patent number: 7453074
    Abstract: An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.
    Type: Grant
    Filed: December 6, 2005
    Date of Patent: November 18, 2008
    Assignee: Axcelis Technologies, Inc.
    Inventors: Edward C. Eisner, William DiVergilio
  • Patent number: 7399980
    Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
    Type: Grant
    Filed: March 9, 2007
    Date of Patent: July 15, 2008
    Assignee: Axcelis Technologies. Inc.
    Inventors: Bo H. Vanderberg, Edward C. Eisner
  • Publication number: 20080078955
    Abstract: An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 3, 2008
    Inventors: Michael A. Graf, Edward C. Eisner, William F. DiVergilio, Daniel R. Tieger
  • Publication number: 20080078957
    Abstract: Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 3, 2008
    Inventors: Michael A. Graf, Edward C. Eisner, William F. DiVergilio, Daniel R. Tieger
  • Publication number: 20080067436
    Abstract: A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.
    Type: Application
    Filed: September 19, 2006
    Publication date: March 20, 2008
    Inventors: Bo H. Vanderberg, Robert D. Rathmell, Edward C. Eisner
  • Publication number: 20080067444
    Abstract: One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
    Type: Application
    Filed: April 9, 2007
    Publication date: March 20, 2008
    Inventors: Victor M. Benveniste, Edward C. Eisner, Bo H. Vanderberg
  • Publication number: 20080061228
    Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
    Type: Application
    Filed: March 9, 2007
    Publication date: March 13, 2008
    Inventors: Bo H. Vanderberg, Edward C. Eisner
  • Publication number: 20080035862
    Abstract: An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed
    Type: Application
    Filed: August 14, 2006
    Publication date: February 14, 2008
    Inventors: Edward C. Eisner, Bo H. Vanderberg
  • Patent number: 7227160
    Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
    Type: Grant
    Filed: September 13, 2006
    Date of Patent: June 5, 2007
    Assignee: Axcelis Technologies, Inc.
    Inventors: Bo H. Vanderberg, Edward C. Eisner