Patents by Inventor Edward C. Lee

Edward C. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7030039
    Abstract: A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution is deposited onto the surface of the substrate in the housing and the substrate is then spun. The control gas and any solvent vapor and particulate contaminants suspended in the control gas are exhausted from the housing through an outlet and the solvent vapor concentration is controlled by controlling the temperature of the housing and the solvent from which the solvent vapor-bearing gas is produced. Instead the concentration can be controlled by mixing gases having different solvent concentrations. The humidity of the gas may also be controlled.
    Type: Grant
    Filed: June 30, 2001
    Date of Patent: April 18, 2006
    Assignee: ASML Holding N.V.
    Inventors: Emir Gurer, Tom Zhong, John Lewellen, Edward C. Lee, Robert P. Mandal, James C. Grambow, Ted C. Bettes, Donald R. Sauer, Edmond R. Ward, Jung-Hoon Chun, Sangjun Han
  • Patent number: 7018943
    Abstract: A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution is deposited onto the surface of the substrate in the housing and the substrate is then spun. The control gas and any solvent vapor and particulate contaminants suspended in the control gas are exhausted from the housing through an outlet and the solvent vapor concentration is controlled by controlling the temperature of the housing and the solvent from which the solvent vapor-bearing gas is produced. Instead the concentration can be controlled by mixing gases having different solvent concentrations. The humidity of the gas may also be controlled.
    Type: Grant
    Filed: June 30, 2001
    Date of Patent: March 28, 2006
    Assignee: ASML Holding N.V.
    Inventors: Gurer Emir, Tom Zhong, John Lewellen, Edward C. Lee, Robert P. Mandal, James C. Grambow, Ted C. Bettes, Donald R. Sauer, Edmond R. Ward
  • Publication number: 20020127334
    Abstract: A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution is deposited onto the surface of the substrate in the housing and the substrate is then spun. The control gas and any solvent vapor and particulate contaminants suspended in the control gas are exhausted from the housing through an outlet and the solvent vapor concentration is controlled by controlling the temperature of the housing and the solvent from which the solvent vapor-bearing gas is produced. Instead the concentration can be controlled by mixing gases having different solvent concentrations. The humidity of the gas may also be controlled.
    Type: Application
    Filed: June 30, 2001
    Publication date: September 12, 2002
    Inventors: Emir Gurer, Tom Zhong, John Lewellen, Edward C. Lee, Robert P. Mandal, James C. Grambow, Ted C. Bettes, Donald R. Sauer, Edmond R. Ward
  • Publication number: 20020098283
    Abstract: A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution is deposited onto the surface of the substrate in the housing and the substrate is then spun. The control gas and any solvent vapor and particulate contaminants suspended in the control gas are exhausted from the housing through an outlet and the solvent vapor concentration is controlled by controlling the temperature of the housing and the solvent from which the solvent vapor-bearing gas is produced. Instead the concentration can be controlled by mixing gases having different solvent concentrations. The humidity of the gas may also be controlled.
    Type: Application
    Filed: June 30, 2001
    Publication date: July 25, 2002
    Inventors: Emir Gurer, Tom Zhong, John Lewellen, Edward C. Lee, Robert P. Mandal, James C. Grambow, Ted C. Dettes, Donald R. Sauer, Edmond R. Ward, Jung-Hoon Chun, Sangjun Han
  • Patent number: 5669801
    Abstract: A microtip of a field emission device cathode (10) may be fabricated by forming a dielectric layer (18) on an upper surface of a resistive layer (16). A gate layer (20) is formed on the dielectric layer (18). An opening is formed in the gate layer (20) and a microtip cavity (28) is formed in the dielectric layer (18). The microtip cavity (28) extends through the opening in the gate layer (20) to the resistive layer (16). Layers of metal are formed on the gate layer (20) and the resistive layer (16) such that a microtip (30) is formed within the microtip cavity (28). Finally, polishing is performed to remove a portion of the overburden or layers of metal on the gate layer (20). The polishing continues until the microtip (30) is exposed.
    Type: Grant
    Filed: September 28, 1995
    Date of Patent: September 23, 1997
    Assignee: Texas Instruments Incorporated
    Inventor: Edward C. Lee
  • Patent number: 5632664
    Abstract: A field emission device cathode (10) may be fabricated by forming a dielectric layer (14) on an upper surface of a resistive layer (12). A gate layer (16) is formed on the dielectric layer (14). An opening is formed in the gate layer (16) and a microtip cavity (18) is formed in the dielectric layer (14). The microtip cavity (18) extends through the opening in the gate layer (16) to the resistive layer (12). A conductive layer is formed on the gate layer (16) and the resistive layer (12) within the microtip cavity (18) to form a conductive opening layer (20) on the gate layer (16) and a microtip cavity layer (22) on the resistive layer (12).
    Type: Grant
    Filed: September 28, 1995
    Date of Patent: May 27, 1997
    Assignee: Texas Instruments Incorporated
    Inventors: John W. Scoggan, Edward C. Lee
  • Patent number: 4390885
    Abstract: An apparatus having a reservoir for enclosing a fluid and a valve for selectively applying gas under pressure to said reservoir and venting said reservoir to the ambient air. A controller supplies a pulse of predetermined duration selected from a plurality of durations to actuate the valve to apply the gas under pressure to the reservoir for expelling a predetermined amount of ink therefrom through a tube by compensation for dynamic effects. The ink is transferred from one end of the tube to a selected item of a sheet of items by moving the end of the tube closely adjacent to the sheet while the ink is being expelled from the reservoir and through the tube for transfer to the individual item.
    Type: Grant
    Filed: June 26, 1981
    Date of Patent: June 28, 1983
    Assignee: Texas Instruments Incorporated
    Inventors: Gautam N. Shah, Michael R. Brown, Edward C. Lee, Gerald C. Hook, Robert L. Wand, Charles R. Ratliff, Virge W. McClure
  • Patent number: 4201939
    Abstract: A planarization and overtravel control circuit is disclosed utilized in conjunction with a multiprobe test system for testing microcircuits disposed on a semiconductor wafer surface. The planarization and overtravel control circuit enables the monitoring of the planarization limit required between data detector probe tips making contact with the integrated circuits on the semiconductor wafer. Overtravel, the distance the data detector probe tips travel into the semiconductor wafer, is also monitored by this apparatus.
    Type: Grant
    Filed: June 26, 1978
    Date of Patent: May 6, 1980
    Assignee: Texas Instruments Incorporated
    Inventors: Edward C. Lee, Thillaigovindan Natarajan