Abstract: An elastic composite is provided in a disposable absorbent garment such as a diaper or training pants. The elastic composite has a base layer, a top layer, and an elastic construction disposed therebetween. The elastic construction includes a plurality of spaced apart (e.g. generally equally spaced apart) elastic elements (e.g. strands or threads) that are aligned in a generally cross machine direction and in generally parallel relation. Further, the top and base layers define a first longitudinally extending side edge and a second longitudinally extending side edge between which, the elastic construction is disposed. The elastic composite further includes an elasticized region, wherein the elastic construction is disposed, a first non-elasticized region disposed between the first side edge and the elasticized region, and a second non-elasticized region disposed between the second side edge and the elasticized region.

Abstract: A secondary internal topsheet and leg wrap structure is provided in a disposable absorbent garment such as a diaper or training pants. The leg wrap structure has a base layer, a top layer, and an elastic construction disposed inbetween. The elastic construction includes a plurality of spaced apart elastic elements that are aligned in a generally in generally parallel relation. The leg wrap structure and secondary topsheet provides for the efficient formation of a reservoir and a plurality of fluid dams each capable of capturing a quantity of fluid to minimize the occurrence of fluid leaks from the absorbent article. Methods of forming such absorbent articles are disclosed.

Abstract: A method for forming a semiconductor structure having a deep sub-micron or nano scale line-width is disclosed. Structure consisting of multiple photoresist layers is first formed on the substrate, then patterned using adequate exposure energy and development condition so that the bottom photoresist layer is not developed while the first under-cut resist groove is formed on top of the bottom photoresist layer. Anisotropic etching is then performed at a proper angle to the normal of the substrate surface, and a second resist groove is formed by the anisotropic etching. Finally, the metal evaporation process and the lift-off process are carried out and the ?-shaped metal gate with nano scale line-width can be formed.

Abstract: An elastic composite is provided in a disposable absorbent garment such as a diaper or training pants. The elastic composite has a base layer, a top layer, and an elastic construction disposed therebetween. The elastic construction includes a plurality of spaced apart (e.g. generally equally spaced apart) elastic elements (e.g. strands or threads) that are aligned in a generally cross machine direction and in generally parallel relation. Further, the top and base layers define a first longitudinally extending side edge and a second longitudinally extending side edge between which, the elastic construction is disposed. The elastic composite further includes an elasticized region, wherein the elastic construction is disposed, a first non-elasticized region disposed between the first side edge and the elasticized region, and a second non-elasticized region disposed between the second side edge and the elasticized region.

Abstract: A method is provided for making an elastic composite for incorporation into a disposable absorbent garment. An elastic element applicator is provided that is configured to move a section of a continuous strand of elastic element generally about a plane. A first web of material is conveyed in a first web moving direction such that the first web intersects the plane. Then, the applicator is operated to move the elastic element about the plane, thereby applying the section of elastic element onto the first web along a direction generally transverse to the web moving direction and such that the first web draws the continuous elastic strand from the elastic element applicator as the first web is conveyed away from the plane. The elastic element applicator may be in the form of a spin cylinder or bracket that is operated to spin the elastic element about the moving first web, thereby applying the elastic element on the first web.

Abstract: A method is provided for making an elastic composite for incorporation into a disposable absorbent garment. An elastic element applicator is provided that is configured to move a section of a continuous strand of elastic element generally about a plane. A first web of material is conveyed in a first web moving direction such that the first web intersects the plane. Then, the applicator is operated to move the elastic element about the plane, thereby applying the section of elastic element onto the first web along a direction generally transverse to the web moving direction and such that the first web draws the continuous elastic strand from the elastic element applicator as the first web is conveyed away from the plane. The elastic element applicator may be in the form of a spin cylinder or bracket that is operated to spin the elastic element about the moving first web, thereby applying the elastic element on the first web.

Abstract: A multiplexor circuit comprising a plurality of data connections, first stage logic configured to receive a first data word from one of the connections and to transmit the first data word received, and second stage logic configured to receive the first data word from the first stage logic and to select a selected data word between the first data word and a second data word received from another of the plurality of data connections based upon a set of select signals, the second stage logic configured to transmit the selected data word.

Abstract: The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.

Abstract: Systems and methods of robust perceptual color identification are disclosed. The methods include a multilevel analysis for determining the robust perceptual color of an object based on observed colors. This multilevel analysis can include a pixel level, a frame level, and/or a sequence level. The determination may make use of color drift matrices and trained functions such as statistical probability functions. The color drift tables and function training are based on training data generated by observing objects of known robust perceptual color in a variety of circumstances. Embodiments of the invention are applicable to the identification and tracking of objects, for example, in a surveillance video system.

Abstract: A method in a high-sensitivity infrared color camera includes selectively passing visible spectral energy and non-visible spectral energy through a color filter array, generating a color image corresponding to a spatial distribution of the visible and non-visible spectral energy from the color filter array, and mapping the spatial distribution of the visible and non-visible spectral energy to a spatial distribution of visible spectral energy in a corrected color image.

Abstract: This invention provides a process for growing Ge epitaixial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaixial layers by using metal organic chemical vapor deposition (MOCVD). The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaixial layer, such as Si0.1Ge0.9 in a thickness of 0.8 ?m on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si0.1Ge0.9 due to the large mismatch between this layer and Si substrate. Furthermore, a subsequent 0.8 ?m Si0.05Ge0.95 layer, and/or optionally a further 0.8 ?m Si0.02Ge0.98 layer, are grown.

Abstract: A method for forming a gate pattern for an electronic device, comprising steps of: providing a substrate, whereon a first photo-resist layer is formed; performing a first photo-lithography process so as to form a first pattern with a first width on the substrate; forming a second photo-resist layer, covering the first pattern and the first photo-resist layer on the substrate; and performing a second photo-lithography process, which is shifted from the first photo-lithography process, so as to form a second pattern with a second width on the substrate; wherein the second width is smaller than the first width.

Abstract: The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.

Abstract: A video surveillance system includes multiple video cameras. The surveillance system is configured with an arrangement to separate the surveillance functions and assign different surveillance functions to different cameras. A master camera is assigned the surveillance of large area surveillance and tracking of object movement while one or more slave cameras are provided to dynamically rotate and adjust focus to obtain clear image of the moving objects as detected by the master camera. Algorithms to adjust the focus-of-attention are disclosed to effectively carry out the tasks by a slave camera under the command of a master camera to obtain images of a moving object with clear feature detections.

Abstract: A disposable absorbent article comprising a liquid permeable topsheet, a liquid impermeable backsheet, and an absorbent core interposed between the topsheet and the backsheet. The absorbent member is defined by a pulp-less absorbent core having a superabsorbent material providing efficient fluid handling characteristics. The absorbent core may be defined by its fluid handling properties including, but not limited to, greater absorbency rate index (ARI) and greater percentage absorbency rate index (PARI) as compared to absorbent articles of conventional pulp-containing technology.

Abstract: A surveillance system is provided that includes at least one sensor disposed in a security area of a surveillance region to sense an occurrence of a potential security breach event; a plurality of cameras is disposed in the surveillance region; at least one camera of the plurality has a view of the security area and can be configured to automatically gather biometric information concerning at least one subject person in the vicinity of the security area in response to the sensing of a potential security breach event; one or more other of the plurality of cameras can be configured to search for the at least one subject person; a processing system is programmed to produce a subject dossier corresponding to the at least one subject person to match biometric information of one or more persons captured by one or more of the other cameras with corresponding biometric information in the subject dossier.

Abstract: A method is provided for evaluating identity of an object, the method including: converting feature information representing the object to a plurality of mathematically defined components; grouping the components into multiple modalities; producing respective first prediction information for each respective modality wherein the respective prediction information for each respective modality is based upon respective components grouped into that respective modality; and producing second prediction information based upon the respective first prediction information produced for the multiple respective modalities.

Abstract: A bi-level structure based on copper metallization technique has been applied to backside of gallium arsenide (GaAs) devices. The foundation where the structure stands on is device substrate backside, on which a layer of diffusion barrier is deposited first, and to the top of it, a layer of copper metallization is plated to enhance device performance. The barrier layer can be selected from tungsten (W), tungsten nitride (WN), or titanium tungsten nitride (TiWN) by sputtering or evaporating, which effectively prevents copper from diffusing into GaAs substrate. The layer of copper metallization, formed by employing anyone of sputtering, evaporating, or electroplating, proves to offer attractive thermal and electrical conductivity and mechanical strength and the like. Moreover, these characteristic improvements coupled with a fascinating part, low cost, would benefit and motivate global GaAs fabs.

Abstract: A multiplexor circuit comprising a plurality of data connections, first stage logic configured to receive a first data word from one of the connections and to transmit the first data word received, and second stage logic configured to receive the first data word from the first stage logic and to select a selected data word between the first data word and a second data word received from another of the plurality of data connections based upon a set of select signals, the second stage logic configured to transmit the selected data word.

Abstract: This invention provides a process for growing Ge epitaixial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaixial layers by using metal organic chemical vapor deposition (MOCVD). The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaixial layer, such as Si0.1Ge0.9 in a thickness of 0.8 ?m on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si0.1Ge0.9 due to the large mismatch between this layer and Si substrate. Furthermore, a subsequent 0.8 ?m Si0.05Ge0.95 layer, and/or optionally a further 0.8 ?m Si0.02Ge0.98 layer, are grown.