Patents by Inventor Edward Crandal Cooney
Edward Crandal Cooney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8643190Abstract: A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.Type: GrantFiled: November 29, 2010Date of Patent: February 4, 2014Assignee: Ultratech, Inc.Inventors: Edward Crandal Cooney, III, Peter James Lindgren, Doreen Jane Ossenkop, Anthony Kendall Stamper
-
Patent number: 8052799Abstract: An apparatus and a method for operating the same. The method includes providing an apparatus which includes a chamber, wherein the chamber includes first and second inlets, an anode and a cathode structures in the chamber, and a wafer on the cathode structure. A cleaning gas is injected into the chamber via the first inlet. A collecting gas is injected into the chamber via the second inlet. The cleaning gas when ionized has a property of etching a top surface of the wafer resulting in a by-product mixture in the chamber. The collecting gas has a property of preventing the by-product mixture from depositing back to the surface of the wafer.Type: GrantFiled: October 12, 2006Date of Patent: November 8, 2011Assignee: International Business Machines CorporationInventors: Edward Crandal Cooney, III, William Joseph Murphy, Anthony Kendall Stamper, David Craig Strippe
-
Publication number: 20110068477Abstract: A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.Type: ApplicationFiled: November 29, 2010Publication date: March 24, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Edward Crandal Cooney, III, Peter James Lindgren, Doreen Jane Ossenkop, Anthony Kendall Stamper
-
Patent number: 7863180Abstract: A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.Type: GrantFiled: May 6, 2008Date of Patent: January 4, 2011Assignee: International Business Machines CorporationInventors: Edward Crandal Cooney, III, Peter James Lindgren, Dorreen Jane Ossenkop, Anthony Kendall Stamper
-
Publication number: 20090278237Abstract: A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.Type: ApplicationFiled: May 6, 2008Publication date: November 12, 2009Applicant: International Business Machines CorporationInventors: Edward Crandal Cooney, III, Peter James Lindgren, Dorreen Jane Ossenkop, Anthony Kendall Stamper
-
Patent number: 7517802Abstract: A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction products that partially adhere to the inner chamber walls. A species is introduced into the etch chamber that increases the adhesion of the first layer of reaction products to the inner chamber walls.Type: GrantFiled: October 17, 2006Date of Patent: April 14, 2009Assignee: International Business Machines CorporationInventors: Edward Crandal Cooney, III, Anthony Kendall Stamper
-
Publication number: 20080093212Abstract: An apparatus and a method for operating the same. The method includes providing an apparatus which includes a chamber, wherein the chamber includes first and second inlets, an anode and a cathode structures in the chamber, and a wafer on the cathode structure. A cleaning gas is injected into the chamber via the first inlet. A collecting gas is injected into the chamber via the second inlet. The cleaning gas when ionized has a property of etching a top surface of the wafer resulting in a by-product mixture in the chamber. The collecting gas has a property of preventing the by-product mixture from depositing back to the surface of the wafer.Type: ApplicationFiled: October 12, 2006Publication date: April 24, 2008Inventors: Edward Crandal Cooney, William Joseph Murphy, Anthony Kendall Stamper, David Craig Strippe
-
Publication number: 20070066067Abstract: A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction products that partially adhere to the inner chamber walls. A species is introduced into the etch chamber that increases the adhesion of the first layer of reaction products to the inner chamber walls.Type: ApplicationFiled: October 17, 2006Publication date: March 22, 2007Inventors: Edward Crandal Cooney, Anthony Kendall Stamper
-
Patent number: 7192874Abstract: A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction products that partially adhere to the inner chamber walls. A species is introduced into the etch chamber that increases the adhesion of the first layer of reaction products to the inner chamber walls.Type: GrantFiled: July 15, 2003Date of Patent: March 20, 2007Assignee: International Business Machines CorporationInventors: Edward Crandal Cooney, III, Anthony Kendall Stamper
-
Publication number: 20020028579Abstract: An alpha-phase tantalum having a resistivity of about 15 micro-ohm-cm or less is provided and is especially useful as a barrier layer for copper and copper alloy interconnections.Type: ApplicationFiled: November 20, 2001Publication date: March 7, 2002Inventors: Edward Crandal Cooney, Cyprian Emeka Uzoh
-
Patent number: 6339258Abstract: An alpha-phase tantalum having a resistivity of about 15 micro-ohm-cm or less is provided and is especially useful as a barrier layer for copper and copper alloy interconnections.Type: GrantFiled: July 2, 1999Date of Patent: January 15, 2002Assignee: International Business Machines CorporationInventors: Edward Crandal Cooney, III, Cyprian Emeka Uzoh