Abstract: A method of making a Josephson Junction is disclosed which includes the steps of depositing a base electrode layer of a refractory superconducting material on a substrate, depositing a first passivation layer on the base electrode, depositing a barrier layer of refractory insulating semiconducting material on the passivation layer, depositing a second passivation layer on the barrier layer, and depositing a counter electrode on the second passivation layer. The layers are deposited at a substrate temperature of from about 50.degree. C. to about 700.degree. C. in an Ultra-High Vacuum sputtering system at a base pressure of less than or equal to 5.times.10.sup.-8 Torr. In the preferred embodiment a base electrode and counter electrode of NbN are separated by a barrier layer of hydrogenated silicon. When exposed to high post processing temperatures this structure maintains a chemically stable interface with the substrate.