Patents by Inventor Edward D. Babich
Edward D. Babich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6685853Abstract: The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.Type: GrantFiled: July 12, 2000Date of Patent: February 3, 2004Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Edward D. Babich, Inna V. Babich, Kuang-Jung Chen, Wayne Martin Moreau, David E. Seeger
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Patent number: 6617086Abstract: A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.Type: GrantFiled: March 2, 2001Date of Patent: September 9, 2003Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Edward D. Babich, Inna V. Babich, Katherina E. Babich, James J. Bucchignano, Karen E. Petrillo, Steven A. Rishton
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Publication number: 20020123010Abstract: A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.Type: ApplicationFiled: March 2, 2001Publication date: September 5, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Marie Angelopoulos, Edward D. Babich, Inna V. Babich, Katherina E. Babich, James J. Bucchignano, Karen E. Petrillo, Steven A. Rishton
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Patent number: 6436605Abstract: The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.Type: GrantFiled: July 12, 1999Date of Patent: August 20, 2002Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, Edward D. Babich, Timothy Allan Brunner, Thomas Benjamin Faure, C. Richard Guarnieri, Ranee W. Kwong, Karen E. Petrillo
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Patent number: 6251569Abstract: A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.Type: GrantFiled: August 13, 1999Date of Patent: June 26, 2001Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Edward D. Babich, Inna V. Babich, Katherina E. Babich, James J. Bucchignano, Karen E. Petrillo, Steven A. Rishton
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Patent number: 6132644Abstract: The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.Type: GrantFiled: May 28, 1998Date of Patent: October 17, 2000Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Edward D. Babich, Inna V. Babich, Kuang-Jung Chen, Wayne Martin Moreau, David E. Seeger
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Patent number: 5830332Abstract: The present invention relates to a method of reactive sputtering for depositing an amorphous hydrogenated carbon film (a-C:H) from an argon/hydrocarbon/hydrogen/oxygen plasma, preferably an Ar/acetylene-helium/hydrogen/oxygen plasma. Such films are optically transparent in the visible range and partially absorbing at ultraviolet (UV) and deep UV (DUV) wavelengths, in particular, 365, and 248, 193 nm. Moreover, the films produced by the present invention are amorphous, hard, scratch resistant, and etchable by excimer laser ablation or by oxygen reactive ion etch process. Because of these unique properties, these films can be used to form a patterned absorber for UV and DUV single layer attenuated phase shift masks. Film absorption can also be increased such that these films can be used to fabricate conventional photolithographic shadow masks.Type: GrantFiled: January 9, 1997Date of Patent: November 3, 1998Assignee: International Business Machines CorporationInventors: Edward D. Babich, Alessandro Cesare Callegari, Fuad Elias Doany, Sampath Purushothaman
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Patent number: 5593812Abstract: The sensitivity of a photoresist to actinic light is improved by the addition of certain dyes. The photoresist includes a polymer matrix, a photosensitive acid generator and at least one compound selected from the group consisting of dyes containing at least one heterosulphur atom such as 2,2.sup.1,5.sup.1,2"-terthiophene and its derivatives; thianthrene and its derivatives, and 4,6-diphenylthieno(3,4-d)-1,3-dioxol-2-one-5,5-dioxide; phenylsulfone and its derivatives; and 4,5-diphenyl-1,3-dioxol-2-one; 3,4-bis(acetoxymethyl)furan; chelidonic acid and its derivatives; and 5,7,12,14-pentacenetetrone. Resist images on a substrate are formed from the compositions.Type: GrantFiled: February 17, 1995Date of Patent: January 14, 1997Assignee: International Business Machines CorporationInventors: Edward D. Babich, Karen E. Petrillo, John P. Simons, David E. Seeger
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Patent number: 5565529Abstract: Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.Type: GrantFiled: June 30, 1993Date of Patent: October 15, 1996Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Richard P. McGouey, Sharon L. Nunes, Jurij R. Paraszczak, Jane M. Shaw
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Patent number: 5457005Abstract: A dry developable photoresist composition that contains in admixture a polymeric epoxide; a di- or polyfunctional organosilicon material; and an onium salt; and use thereof to produce an image.Type: GrantFiled: July 2, 1993Date of Patent: October 10, 1995Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Ronald W. Nunes, Sharon L. Nunes, Jurij R. Paraszczak, Russell J. Serino
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Patent number: 5286599Abstract: A composition containing novolak polymer, and/or poly(p-vinylphenol), an organometallic material, an amino polymer a cationic photocatalyst. The composition can also include a cosensitizer material which makes a composition sensitive to near U.V. radiation.Type: GrantFiled: September 26, 1991Date of Patent: February 15, 1994Assignee: International Business Machines CorporationInventors: Edward D. Babich, Eileen A. Galligan, Jeffrey D. Gelorme, Richard P. McGouey, Sharon L. Nunes, Jurij R. Paraszczak, Russell J. Serino, David F. Witman
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Patent number: 5238773Abstract: A composition containing an organosilicon material having terminal quinone groups, and a phenolic-novolak polymer, and use thereof in photolithography.Type: GrantFiled: June 8, 1992Date of Patent: August 24, 1993Assignee: International Business Machines CorporationInventors: Edward D. Babich, Donis G. Flagello, Michael Hatzakis, Jurij R. Paraszczak, Jane M. Shaw, David F. Witman
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Patent number: 5229251Abstract: A dry developable photoresist composition that contains in admixture a polymeric epoxide; a di- or polyfunctional organosilicon material; and an onium salt; and use thereof to produce an image.Type: GrantFiled: April 29, 1991Date of Patent: July 20, 1993Assignee: International Business Machines Corp.Inventors: Edward D. Babich, Jeffrey D. Gelorme, Ronald W. Nunes, Sharon L. Nunes, Jurij R. Paraszczak, Russell J. Serino
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Patent number: 5141817Abstract: Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.Type: GrantFiled: June 13, 1989Date of Patent: August 25, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Richard P. McGouey, Sharon L. Nunes, Jurij R. Paraszczak, Jane M. Shaw
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Patent number: 5115095Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: May 19, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5110711Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: May 5, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5098816Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: March 24, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5059512Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: October 10, 1989Date of Patent: October 22, 1991Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 4981909Abstract: Plasma-resistant polymeric materials are prepared by reacting a polymeric material containing reactive hydrogen functional groups with a multifunctional organometallic material containing at least two functional groups which are reactive with the reactive hydrogen functional groups of the polymeric material, such as hexamethylcyclotrisilazane.Type: GrantFiled: September 7, 1988Date of Patent: January 1, 1991Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Scott L. Jacobs, Juri R. Parasczcak, Jane M. Shaw, David F. Witman
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Patent number: 4782008Abstract: Plasma-resistant polymeric materials are prepared by reacting a polymeric material containing reactive hydrogen functional groups with a multifunctional organometallic material containing at least two functional groups which are reactive with the reactive hydrogen functional groups of the polymeric material, such as hexamethylcyclotrisilazane.Type: GrantFiled: March 19, 1985Date of Patent: November 1, 1988Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Scott L. Jacobs, Juri R. Parasczcak, Jane M. Shaw, David F. Witman