Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a ground pin that extends two regions of a platen that support the substrate. The ground pin may comprise a pin body; and a sleeve comprising an upper portion, a side portion, and a lower portion, the sleeve being configured to fit around the pin body, the sleeve including a fluid channel configured to transport fluid between the upper portion and the lower portion of the sleeve.

Abstract: A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: A technique for implementing a variable aperture lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as a variable aperture lens. The variable aperture lens may comprise a first electrode element. The variable aperture lens may also comprise a second electrode element. The variable aperture lens may further comprise a driver assembly coupled to at least one of the first and the second electrode elements, wherein the driver assembly alters an aperture between the first and the second electrode elements based on a geometry of an ion beam.

Abstract: A technique for implementing a variable aperture lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as a variable aperture lens. The variable aperture lens may comprise a first electrode element. The variable aperture lens may also comprise a second electrode element. The variable aperture lens may further comprise a driver assembly coupled to at least one of the first and the second electrode elements, wherein the driver assembly alters an aperture between the first and the second electrode elements based on a geometry of an ion beam.

Abstract: Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.

Abstract: Wafer transfer apparatus for horizontal transfer of a wafer between a cassette and an input station of a vacuum processing system includes a wafer transfer arm with a primary section linked to a secondary section so as to move a wafer in a straight line to a location and orientation station and then to the input station. The actual location of the wafer center and the angular orientation of the wafer flat are determined, and the wafer is rotated to a desired angular orientation at the location and orientation station. A solar cell is used to sense actual wafer position by sensing the wafer edge as it is rotated. The required correction and rotation are calculated from the solar cell output. As the wafer is transferred to the input station, correcting displacements are added to the movement so that the wafer is accurately positioned at the input station. A strain gauge is used to reliably sense wafer presence or absence on the transfer arm.

Abstract: A system for the automated transfer of semiconductor wafers between a cassette and a wafer processing chamber. Included in the system are a cassette conveyor assembly, a wafer transfer assembly and a wafer handling assembly associated with the entrance to the processing chamber. Wafers of any standard size can be accommodated by the system. The cassette conveyor assembly includes a cassette holder which retains and precisely positions two standard plastic cassettes. The cassette holder is positioned by a ball reverser driven by a motor and a mechanical stepper. The wafer transfer assembly includes an elevator blade which vertically raises and lowers wafers to and from the wafer handling assembly. The elevator blade is actuated by a crank driven by a motor and a mechanical stepper. The crank provides a high rate of wafer transfer and a low risk of wafer damage.