Abstract: Crystallographic orientations of ruthenium films and related methods are disclosed. Single crystal ruthenium films are provided with crystallographic orientations that arrange a c-axis of the ruthenium crystal structure in a direction that corresponds with a plane of the film or along a direction that corresponds with a surface of a substrate on which the film is formed. While ruthenium films typically form with the c-axis perpendicular to the surface of the substrate or as a polycrystalline film with a random crystallographic orientation, substrate surfaces may be configured with a crystallographic surface net that promotes non-perpendicular c-axis orientations of ruthenium. The substrate may be formed with a metal-terminated surface in certain arrangements. In this regard, ruthenium films may be configured as metallic interconnects for devices where directions of lowest electrical resistivity within the crystal structure are arranged to correspond with the direction of current flow in the devices.

Abstract: Crystallographic orientations of ruthenium films and related methods are disclosed. Single crystal ruthenium films are provided with crystallographic orientations that arrange a c-axis of the ruthenium crystal structure in a direction that corresponds with a plane of the film or along a direction that corresponds with a surface of a substrate on which the film is formed. While ruthenium films typically form with the c-axis perpendicular to the surface of the substrate or as a polycrystalline film with a random crystallographic orientation, substrate surfaces may be configured with a crystallographic surface net that promotes non-perpendicular c-axis orientations of ruthenium. The substrate may be formed with a metal-terminated surface in certain arrangements. In this regard, ruthenium films may be configured as metallic interconnects for devices where directions of lowest electrical resistivity within the crystal structure are arranged to correspond with the direction of current flow in the devices.

Abstract: A thermite composition includes at least one composite particle having a convoluted lamellar structure having alternating metal oxide layers including a metal oxide and metal layers including a metal capable of reducing the metal oxide. The metal oxide layers and metal layers both have an average thickness of between 10 nm and 1 ?m. Molar proportions of the metal oxide and metal is within 30% of being stoichiometric for a thermite reaction.

Abstract: A resistor, fabricating method, and thermal sensor material for resistors that incorporate high Temperature Coefficient of Resistance (TCR) values and low resistivity for better sensitivity in infrared imaging applications are disclosed. Amorphous oxide thin films, preferably oxides of vanadium (VOx), were deposited on thermally grown silicon dioxide by direct current (DC) magnetron co-sputtering of noble metals (gold and platinum) in a controlled argon/oxygen atmosphere. The ideal conditions for preparing an amorphous vanadium oxide/noble metal thin film are identified. TCR and resistivity results showed that the additions of gold (Au) and platinum (Pt) into VOx reduced the resistivity. However, only gold (Au) was found to improve TCR value. Reducing the amount of oxygen in the thin film, further improved the ratio between TCR and resistivity. Infrared detection and imaging devices can be greatly improved with a “drop-in” amorphous vanadium oxide/noble metal thin film of the present invention.

Abstract: A process for the preparation of composite thermite particles, and thermite particles and consolidated objects formed from a plurality of pressed composite particles. The process includes providing one or more metal oxides and one or more complementary metals capable of reducing the metal oxide, and milling the metal oxide and the metal at a temperature below ?50° C., such as cryomilling, to form a convoluted lamellar structure. The average layer thickness is generally between 10 nm and 1 ?m. The molar proportions of the metal oxide and metal are generally within 30% of being stoichiometric for a thermite reaction.

Abstract: A metastable intermolecular composite (MIC) and methods for forming the same includes a first material and a second material having an interfacial region therebetween. The first and second material are capable of an exothermic chemical reaction with one another to form at least one product and are in sufficiently close physical proximity to one another so that upon initiation the exothermic reaction develops into a self initiating reaction. At least one of said first and second materials include a metal that is reactive with water vapor at room temperature. The interfacial region averages <2 nm thick, such as <1 nm thick. In one embodiment, the first material is Al and the second material is CuOx.

Abstract: A resistor, fabricating method, and thermal sensor material for resistors that incorporate high Temperature Coefficient of Resistance (TCR) values and low resistivity for better sensitivity in infrared imaging applications are disclosed. Amorphous oxide thin films, preferably oxides of vanadium (VOx), were deposited on thermally grown silicon dioxide by direct current (DC) magnetron co-sputtering of noble metals (gold and platinum) in a controlled argon/oxygen atmosphere. The ideal conditions for preparing an amorphous vanadium oxide/noble metal thin film are identified. TCR and resistivity results showed that the additions of gold (Au) and platinum (Pt) into VOx reduced the resistivity. However, only gold (Au) was found to improve TCR value. Reducing the amount of oxygen in the thin film, further improved the ratio between TCR and resistivity. Infrared detection and imaging devices can be greatly improved with a “drop-in” amorphous vanadium oxide/noble metal thin film of the present invention.

Abstract: A process for the preparation of composite thermite particles, and thermite particles and consolidated objects formed from a plurality of pressed composite particles. The process includes providing one or more metal oxides and one or more complementary metals capable of reducing the metal oxide, and milling the metal oxide and the metal at a temperature below ?50° C., such as cryomilling, to form a convoluted lamellar structure. The average layer thickness is generally between 10 nm and 1 ?m. The molar proportions of the metal oxide and metal are generally within 30% of being stoichiometric for a thermite reaction.

Abstract: A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems. The selection of the thickness of the second sublayer to be a major portion and the inclusion of barrier layers are also described.

Abstract: Compact apparatus characterized by cleanliness of operation, high throughput and low cost is designed for automatically loading and unloading wafer-carrying trays that are designed to be mounted in the reaction chamber of a processing system. A key component of the apparatus comprises a unique wafer vacuum chuck.