Patents by Inventor Edward Dennis Adams

Edward Dennis Adams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a nitrided silicon oxide gate dielectric layer
    Patent number: 7737050
    Abstract: A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: June 15, 2010
    Assignee: International Business Machines Corporation
    Inventors: Edward Dennis Adams, Jay Sanford Burnham, Evgeni Gousev, James Spiros Nakos, Heather Elizabeth Preuss, Joseph Francis Shepard, Jr.
  • METHOD OF FABRICATING A NITRIDED SILICON OXIDE GATE DIELECTRIC LAYER
    Publication number: 20080102650
    Abstract: A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.
    Type: Application
    Filed: October 30, 2006
    Publication date: May 1, 2008
    Inventors: Edward Dennis Adams, Jay Sanford Burnham, Evgeni Gousev, James Spiros Nakos, Heather Elizabeth Preuss, Joseph Francis Shepard