Abstract: A method for etching semiconductor fusions to change their electrical characteristic, especially to reduce the firing current of thyristor fusions, to a predetermined desired value is disclosed.The etching is accomplished by subjecting fusions comprised of a body of semiconductor material, for example, silicon, including an anode emitter region therein and an anode electrode affixed thereto, an anode base region, a cathode base region and a gate electrode affixed thereto, and a cathode emitter region having a cathode electrode affixed thereto, to a plasma etchant comprising a mixture of CF.sub.4 and a carrier gas such for example, nitrogen, for a predetermined time interval. Following this etching cycle the firing current of the fusions is measured. Any fusions having a firing current in excess of the desired value at the end of the first etching cycle are subjected to another etching cycle to further reduce the firing current.