Patents by Inventor Edward Eisner
Edward Eisner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11114270Abstract: A scanning magnet is positioned downstream of a mass resolving magnet of an ion implantation system and is configured to control a path of an ion beam downstream of the mass resolving magnet for a scanning or dithering of the ion beam. The scanning magnet has a yoke having a channel defined therein. The yoke is ferrous and has a first side and a second side defining a respective entrance and exit of the ion beam. The yoke has a plurality of laminations stacked from the first side to the second side, wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations having plurality of slots defined therein.Type: GrantFiled: August 21, 2018Date of Patent: September 7, 2021Assignee: Axcelis Technologies, Inc.Inventors: Bo Vanderberg, Edward Eisner
-
Patent number: 11037754Abstract: An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.Type: GrantFiled: December 19, 2019Date of Patent: June 15, 2021Assignee: Axcelis Technologies, Inc.Inventors: Edward Eisner, Bo Vanderberg
-
Publication number: 20200194221Abstract: An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.Type: ApplicationFiled: December 19, 2019Publication date: June 18, 2020Inventors: Edward Eisner, Bo Vanderberg
-
Publication number: 20200066478Abstract: A scanning magnet is positioned downstream of a mass resolving magnet of an ion implantation system and is configured to control a path of an ion beam downstream of the mass resolving magnet for a scanning or dithering of the ion beam. The scanning magnet has a yoke having a channel defined therein. The yoke is ferrous and has a first side and a second side defining a respective entrance and exit of the ion beam. The yoke has a plurality of laminations stacked from the first side to the second side, wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations having plurality of slots defined therein.Type: ApplicationFiled: August 21, 2018Publication date: February 27, 2020Inventors: Bo Vanderberg, Edward Eisner
-
Patent number: 10573485Abstract: An electrode system for an ion source has a source electrode that defines a source aperture in an ion source chamber, and is coupled to a source power supply. A first ground electrode defines a first ground aperture that is electrically coupled to an electrical ground potential and extracts ions from the ion source. A suppression electrode is positioned downstream of the first ground electrode and defines a suppression aperture that is electrically coupled to a suppression power supply. A second ground electrode is positioned downstream of the suppression electrode and defines a second ground aperture. The first and second ground electrodes are fixedly coupled to one another and are electrically coupled to the electrical ground potential.Type: GrantFiled: December 20, 2018Date of Patent: February 25, 2020Assignee: Axcelis Technologies, Inc.Inventors: Wilhelm Platow, Edward Eisner, Bo Vanderberg, Neil Bassom, Michael Cristoforo, Joshua Abeshaus
-
Patent number: 10553392Abstract: An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.Type: GrantFiled: December 13, 2018Date of Patent: February 4, 2020Assignee: Axcelis Technologies, Inc.Inventors: Edward Eisner, Bo Vanderberg
-
Patent number: 8168941Abstract: An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.Type: GrantFiled: January 22, 2009Date of Patent: May 1, 2012Assignee: Axcelis Technologies, Inc.Inventors: Marvin Farley, Donald Polner, Geoffrey Ryding, Theodore Smick, Takao Sakase, Ronald Horner, Edward Eisner, Paul Eide, Brian Freer, Mark Lambert, Donovan Beckel
-
Patent number: 8089052Abstract: An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.Type: GrantFiled: April 14, 2009Date of Patent: January 3, 2012Assignee: Axcelis Technologies, Inc.Inventors: Daniel Tieger, William DiVergilio, Edward Eisner, Michael Graf
-
Publication number: 20100181470Abstract: An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.Type: ApplicationFiled: January 22, 2009Publication date: July 22, 2010Applicant: Axcelis Technologies, Inc.Inventors: Marvin Farley, Donald Polner, Geoffrey Ryding, Theodore Smick, Takao Sakase, Ronald Horner, Edward Eisner, Paul Eide, Brian Freer, Mark Lambert, Donovan Beckel
-
Publication number: 20100065761Abstract: A deflection component suitable for use in an ion implantation system comprises multiple electrodes that can be selectively biased to cause an ion beam passing therethrough to bend, deflect, focus, converge, diverge, accelerate, decelerate, and/or decontaminate. Since the electrodes can be selectively biased, and thus one or more of them can remain unbiased or off, the effective length of the beam path can be selectively adjusted as desired (e.g., based upon beam properties, such as energy, dose, species, etc.).Type: ApplicationFiled: September 17, 2008Publication date: March 18, 2010Applicant: Axcelis Technologies, Inc.Inventors: Michael A. Graf, Bo H. Vanderberg, Edward Eisner
-
Publication number: 20090266997Abstract: An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.Type: ApplicationFiled: April 14, 2009Publication date: October 29, 2009Applicant: Axcelis Technologies, Inc.Inventors: Daniel Tieger, William DiVergilio, Edward Eisner, Michael Graf
-
Publication number: 20070125965Abstract: An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.Type: ApplicationFiled: December 6, 2005Publication date: June 7, 2007Applicant: Axcelis Technologies, Inc.Inventors: Edward Eisner, William DiVergilio