Abstract: Various embodiments provide an electronic module comprising a interposer comprising a fluid channel formed in an electrically isolating material and an electrically conductive structured layer; at least one electronic chip attached to the electrically conductive layer and in thermal contact to the fluid channel; and a molded encapsulation formed at least partially around the at least one electronic chip, wherein the electrically conductive structured layer is directly formed on the electrically isolating material.

Abstract: A method of producing a semiconductor device is provided. The method includes: providing a semiconductor wafer, the wafer including an upper layer of a semiconductor material, an inner etch stop layer and a lower layer; forming a plurality of functional areas in the upper layer; performing a selective first etch process on the upper layer so as to separate the plurality of functional areas from each other by trenches etched through the upper layer, the first etch process being substantially stopped by the inner etch stop layer; and removing the lower layer by a second etch process, the second etch process being substantially stopped by the inner etch stop layer.

Abstract: A semiconductor device includes a first lead frame, a second lead frame, a first semiconductor chip, and an encapsulation material. The first lead frame includes a first die pad having a first surface and a second surface opposite to the first surface. The second lead frame includes a second die pad having a first surface and a second surface opposite to the first surface. The first surface of the second die pad faces the first surface of the first die pad. The first semiconductor chip is attached to the first surface of the first die pad. The encapsulation material encapsulates the first semiconductor chip and portions of the first lead frame and the second lead frame. The encapsulation material has a first surface aligned with the second surface of the first die pad and a second surface aligned with the second surface of the second die pad.

Abstract: Method for producing chip assemblies that include semiconductor chip arrangements, each semiconductor chip arrangement including a semiconductor chip having a semiconductor body with a top side and an underside, a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, an electrically conductive top compensation lamina arranged on a side of the top main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the top main electrode, an electrically conductive bottom compensation lamina arranged on a side of the bottom main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the bottom main electrode, and a dielectric embedding compound enclosing the semiconductor chip laterally such that the side of the compensation laminae facing away from the semiconductor body are at least not completely covered by the embedding compound.

Abstract: An example power device includes a semiconductor chip and an arrester element configurable to, in response to a voltage across the arrester element being greater than a threshold voltage, create a current path around an isolation layer configured to electrically isolate the semiconductor chip from a heat sink configured to dissipate heat generated by the semiconductor chip. In this example power device, the threshold voltage is less than a breakdown voltage of the isolation layer.

Abstract: An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

Abstract: A method for fabricating a semiconductor chip is disclosed. In an embodiment, the method includes providing a carrier, providing a plurality of semiconductor chips, the semiconductor chips each including a first main face and a second main face opposite to the first main face and side faces connecting the first and second main faces, placing the semiconductor chips on the carrier with the second main faces facing the carrier, and applying an encapsulation material to the side faces of the semiconductor chips.

Abstract: A method of manufacturing a semiconductor power package includes: providing a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing; bonding a power semiconductor chip on the electrically conducting chip carrier; and applying a covering material so as to embed the power semiconductor chip. The covering material has an elastic modulus less than an elastic modulus of a material of the pre-molded chip housing and/or a thermal conductivity greater than a thermal conductivity of the material of the pre-molded chip housing and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.

Abstract: An electronic component, the electronic component comprising an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating part of the carrier and the electronic chip, and an electrically insulating and thermally conductive interface structure covering an exposed surface portion of the carrier and a connected surface portion of the encapsulant and being functionalized for promoting heat dissipation via the interface structure on a heat dissipation body.

Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

Abstract: A semiconductor power package includes a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing. The semiconductor power package further includes a power semiconductor chip bonded on the electrically conducting chip carrier. A covering material is provided to embed the power semiconductor chip. The covering material has an elastic modulus less than an elastic modulus of a material of the pre-molded chip housing and/or a thermal conductivity greater than a thermal conductivity of the material of the pre-molded chip housing and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.

Abstract: A method for fabricating an electronic device package includes providing a carrier, disposing a semiconductor chip onto the carrier, the semiconductor chip having a contact pad on a main face thereof remote from the carrier, applying a contact element onto the contact pad, applying a dielectric layer on the carrier, the semiconductor chip, and the contact element, and applying an encapsulant onto the dielectric layer.

Abstract: An electronic component which comprises an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating at least part of at least one of the carrier and the electronic chip, and a functional structure covering a surface portion of the encapsulant, wherein at least part of the covered surface portion of the encapsulant is spatially selectively roughened.

Abstract: A method of manufacturing an electronic device package includes structuring a metal layer to generate a structured metal layer having a plurality of openings. Semiconductor chips are placed into at least some of the openings. An encapsulating material is applied over the structured metal layer and the semiconductor chips to form an encapsulation body. The encapsulation body is separated into a plurality of electronic device packages.

Abstract: In various embodiments, an arrangement is provided. The arrangement may include a plurality of chips; a chip carrier carrying the plurality of chips, the chip carrier including a chip carrier notch; and encapsulation material encapsulating the chip carrier and filling the chip carrier notch; wherein the outer circumference of the encapsulation material is free from a recess.

Abstract: A method of manufacturing a package which comprises encapsulating at least part of an electronic chip by an encapsulant, subsequently covering a part of the electronic chip with a chip attach medium, and attaching the encapsulated electronic chip on a chip carrier via the chip attach medium.

Abstract: In various embodiments, an arrangement is provided. The arrangement may include a plurality of chips; a chip carrier carrying the plurality of chips, the chip carrier including a chip carrier notch; and encapsulation material encapsulating the chip carrier and filling the chip carrier notch; wherein the outer circumference of the encapsulation material is free from a recess.

Abstract: A device may include a carrier, a semiconductor chip arranged over a first surface of the carrier, and an encapsulation body comprising six side surfaces and encapsulating the semiconductor chip. A second surface of the carrier opposite to the first surface of the carrier is exposed from the encapsulation body. The device may further include electrical contact elements electrically coupled to the semiconductor chip and protruding out of the encapsulation body exclusively through two opposing side surfaces of the encapsulation body which have the smallest surface areas of all the side surfaces of the encapsulation body, and an electrically insulating layer arranged over the exposed second surface of the carrier.

Abstract: An electronic component which comprises an electrically insulating layer having at least one through hole, a patterned electrically conductive structure at least partially on the electrically insulating layer, an electronic chip electrically coupled with the patterned electrically conductive structure, an encapsulant at least partially encapsulating the electronic chip, and at least one electrically conductive contact structure at least partially in the at least one through hole in contact with at least part of the patterned electrically conductive structure.

Abstract: Described are techniques related to semiconductor devices that make use of encapsulant. In one implementation, a semiconductor device may be manufactured to include at least an encapsulant that includes at least glass particles.