Abstract: A method for manufacturing optically-transparent lids includes etching sub-wavelength structures on a surface of a lid wafer. The structures may be arrayed in a hexagonally closed-packed pattern.

Abstract: A method for manufacturing optically-transparent lids includes etching sub-wavelength structures on a surface of a lid wafer. The structures may be arrayed in a hexagonally closed-packed pattern.

Abstract: A method for manufacturing optically-transparent lids includes etching sub-wavelength structures on a surface of a lid wafer. The structures may be arrayed in a hexagonally closed-packed pattern.

Abstract: A package (10, 60, 80) has a chamber (24) containing an integrated circuit (13) which detects infrared radiation. The package has on one side of the integrated circuit a portion (23) transparent to infrared radiation, and has on the opposite side of the integrated circuit a first part (12) which supports the integrated circuit. A second part (36) of the package is spaced from the first part (12) on the side thereof opposite from the integrated circuit. Thermoelectric cooling elements (51) are provided between and are thermally coupled to the first and second parts. Electrically conductive further elements (44) are also disposed between the first and second parts. A first arrangement (32, 29, 17, 18) electrically couples a terminal on the integrated circuit to a first end of the further element. A second arrangement (41, 38) electrically couples each further element to a respective pad (42) disposed on the side of the second part opposite from the first part.

Abstract: A thermal imaging system (10) for providing an image representative of an amount of thermal radiation incident to the system is provided. The system (10) includes a thermal detector (28 or 30) made from a layer of temperature sensitive material forming a first element of a signal-producing circuit (54). The first element (28 or 30) has either a resistance or capacitance value depending on its temperature. The system (10) also includes an integrated circuit substrate (32) having a second element (56 or 58) of the signal-producing circuit (54) complementary and electrically coupled to the first element (28 or 30). The signal-producing circuit (54) may produce an output signal having a amplitude. The amplitude of the output signal is monitored as representing an absolute temperature of the detector (28 or 30) so as to determine the amount of thermal energy incident to the system (10).

Abstract: A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).

Abstract: A hybrid thermal detector and method for producing same where the optical coating 32 of the hybrid thermal detector has elongated parallel thermal isolation stots 62 along one axis. The elongated parallel slots 62 improve the acuity, or MTF of the resultant image produced by the detector along one axis. The optical coating 32 may be corrugated, or elevated, in order to add structural support and allow mechanical compliance along the axis of the slots.

Abstract: A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106).

Abstract: A thermal imaging system (10) for providing an image representative of an amount of thermal radiation incident to the system is provided. The system (10) includes a thermal detector (28 or 30) made from a layer of temperature sensitive material forming a first element of a signal-producing circuit (54). The first element (28 or 30) has either a resistance or capacitance value depending on its temperature. The system (10) also includes an integrated circuit substrate (32) having a second element (56, 58, 62, or 64) of the signal-producing circuit (54) complementary and electrically coupled to the first element (28 or 30). The signal-producing circuit (54) may produce an output signal having a frequency. The frequency of the output signal is monitored as representing an absolute temperature of the detector (28 or 30) so as to determine the amount of thermal energy incident to the system (10).

Abstract: A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106).

Abstract: A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).

Abstract: A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation.

Abstract: A mesa (31) is formed from polyimide (or a similar polymer material) to achieve a high thermal resistance. In an exemplary thermal imaging application, an array of thermal isolation mesa structures (30) are disposed on an integrated circuit substrate (20) for electrically connecting and bonding a corresponding focal plane array (5) of thermal sensors (10). Each mesa structure (30) includes a polyimide mesa (31) over which is formed a metal conductor (32) that extends from the top of the mesa down a mesa sidewall to an adjacent IC contact pad (22). When the focal plane array (5) is bonded to the corresponding array of thermal isolation mesa structures (30), a thermally isolated, but electrically conductive path is provided between the sensor signal electrode (16) of the thermal sensor (10) and the corresponding contact pad (22) of the integrated circuit substrate (20).

Abstract: A mesa (31) is formed from polyimide (or a similar polymer material) to achieve a high thermal resistance. In an exemplary thermal imaging application, an array of thermal isolation mesa structures (30) are disposed on an integrated circuit substrate (20) for electrically connecting and bonding a corresponding focal plane array (5) of thermal sensors (10). Each mesa structure (30) includes a polyimide mesa (31) over which is formed a metal conductor (32) that extends from the top of the mesa down a mesa sidewall to an adjacent IC contact pad (22). When the focal plane array (5) is bonded to the corresponding array of thermal isolation mesa structure (30), a thermally isolated, but electrically conductive path is provided between the sensor signal electrode (16) of the thermal sensor (10) and the corresponding contact pad (22) of the integrated circuit substrate (20).