Abstract: Diamond-containing articles such as composite materials shaped as some specific article, can be engineered such that bodies that contact the article only contact diamond. In an embodiment, the article may be in the form of equipment for handling semiconductor wafers such as vacuum or electrostatic chucks. In one embodiment, the diamond-containing article can be a composite of diamond particulate reinforcing a Si/SiC body such as reaction-bonded SiC. Lapping the diamond-reinforced RBSC body with progressively finer diamond grit removes some of the SiC/Si matrix material, leaving diamond particles of uniform height “standing proud” above the rest of the surface of the formed article. Further, if the diamond-containing article is sufficiently electrically conductive, it may be machinable using electrical discharge machining.

Abstract: Methods of forming chemical-mechanical polishing/planarization pad conditioner bodies made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or “standing proud” of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si/SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping/polishing with abrasive.

Abstract: A chemical-mechanical polishing/planarization pad conditioner body made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or “standing proud” of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si/SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping/polishing with abrasive.

Abstract: A perforated film electrode for a pinned electrostatic chuck that lies below the top surface of the pins in the valleys or interstices between pins, below the elevation of the top surface of the pins, and is attached to the body of the chuck. In one embodiment, the perforated film electrode assembly features a thin film electrode sandwiched between thin sheets of electrically insulating material. The top, outer or exposed surface of the perforated film electrode assembly has a flatness that is maintained within 3 microns. That is, the distance or elevation between the tops of the pins and the top surface of the perforated film unit is maintained within plus or minus 3 microns. A tool for producing a uniform elevation of the top and bottom sheets or layers of electrically insulating material also is taught.

Abstract: A method for selectively coating the tops of pins of a pin chuck with a high thermal stability material, such as diamond-like carbon (DLC). Non-pin areas (“valleys”) of the pin chuck support surface are temporarily covered with glass frit or glass beads during the DLC coating operation. After coating, the glass frit/beads masking material may be removed, leaving the DLC material selectively coating the pin tops. The selective DLC coating avoids the cracking or warping problems due to CTE mismatch when DLC is coated over the entire pin chuck support surface, as the pin chuck material typically is very different from DLC.

Abstract: Diamond-containing articles such as composite materials shaped as some specific article, can be engineered such that bodies that contact the article only contact diamond. In an embodiment, the article may be in the form of equipment for handling semiconductor wafers such as vacuum or electrostatic chucks. In one embodiment, the diamond-containing article can be a composite of diamond particulate reinforcing a Si/SiC body such as reaction-bonded SiC. Lapping the diamond-reinforced RBSC body with progressively finer diamond grit removes some of the SiC/Si matrix material, leaving diamond particles of uniform height “standing proud” above the rest of the surface of the formed article. Further, if the diamond-containing article is sufficiently electrically conductive, it may be machinable using electrical discharge machining.

Abstract: In a wafer chuck design featuring pins or “mesas” making up the support surface, engineering the pins to have an annular shape, or to contain holes or pits, minimizes sticking of the wafer, and improves wafer settling. In another aspect of the invention is a tool and method for imparting or restoring flatness and roughness to a surface, such as the support surface of a wafer chuck. The tool is shaped such that the contact to the surface being treated is a circle or annulus. The treatment method may take place in a dedicated apparatus, or in-situ in semiconductor fabrication apparatus. The tool is smaller than the diameter of the wafer pin chuck, and may be approximate to the spatial frequency of the high spots to be lapped. The movement of the tool relative to the support surface is such that all areas of the support surface may be processed by the tool, or only those areas needing correction.

Abstract: A perforated film electrode for a pinned electrostatic chuck that lies below the top surface of the pins in the valleys or interstices between pins, below the elevation of the top surface of the pins, and is attached to the body of the chuck. In one embodiment, the perforated film electrode assembly features a thin film electrode sandwiched between thin sheets of electrically insulating material. The top, outer or exposed surface of the perforated film electrode assembly has a flatness that is maintained within 3 microns. That is, the distance or elevation between the tops of the pins and the top surface of the perforated film unit is maintained within plus or minus 3 microns. A tool for producing a uniform elevation of the top and bottom sheets or layers of electrically insulating material also is taught.

Abstract: A method for selectively coating the tops of pins of a pin chuck with a high thermal stability material, such as diamond-like carbon (DLC). Non-pin areas (“valleys”) of the pin chuck support surface are temporarily covered with glass frit or glass beads during the DLC coating operation. After coating, the glass frit/beads masking material may be removed, leaving the DLC material selectively coating the pin tops. The selective DLC coating avoids the cracking or warping problems due to CTE mismatch when DLC is coated over the entire pin chuck support surface, as the pin chuck material typically is very different from DLC.

Abstract: A chemical-mechanical polishing/planarization pad conditioner body made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or “standing proud” of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si/SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping/polishing with abrasive.

Abstract: In a wafer chuck design featuring pins or “mesas” making up the support surface, engineering the pins to have an annular shape, or to contain holes or pits, minimizes sticking of the wafer, and improves wafer settling. In another aspect of the invention is a tool and method for imparting or restoring flatness and roughness to a surface, such as the support surface of a wafer chuck. The tool is shaped such that the contact to the surface being treated is a circle or annulus. The treatment method may take place in a dedicated apparatus, or in-situ in semiconductor fabrication apparatus. The tool is smaller than the diameter of the wafer pin chuck, and may be approximate to the spatial frequency of the high spots to be lapped. The movement of the tool relative to the support surface is such that all areas of the support surface may be processed by the tool, or only those areas needing correction.

Abstract: A substrate surface 10 having a photo-sensitive material surface thereon is simultaneously exposed to four plane waves of light at angles of incidence &thgr;, −&thgr;, &phgr; and −&phgr; subtending from the normal of the surface. The four plane waves create an interference pattern on the substrate so as to cause the formation of a periodic structure on the photo-sensitive material surface of the substrate.

Abstract: A system for fabricating optical elements includes a source of optical radiation that provides an optical beam, the system includes an intensity controller in the path of the beam. The intensity controlled beam is directed toward a substrate disposed on a stage. The stage is adopted to be controllably translated in accordance with an optical intensity map.