Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.

Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.

Abstract: Provided is a device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, wherein the device further comprises an opaque element that prevents light emitted by the light-emitting optoelectronic element from reaching the photocurrent-generating optoelectronic element via a pathway within the device.

Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.

Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.

Abstract: Provided is a method of detecting the presence of an object in proximity to an optoelectronic device comprising (a) providing an optoelectronic device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, (b) imposing an effective forward bias voltage on the light-emitting optoelectronic element and an effective reverse bias voltage on the photocurrent-generating optoelectronic element, (c) bringing an object capable of scattering or reflecting light or a combination thereof to a distance of 0.1 to 5 mm from a point on the surface of the optoelectronic device from which light emerges, causing light that is emitted by the light-emitting optoelectronic element to be reflected or scattered so that the light falls upon the photocurrent-generating optoelectronic element.

Abstract: The present invention relates to composite polymeric particles for use as infrared reflectors in optical bandpass applications.

Abstract: Provided are methods for protecting a photovoltaic module, comprising applying a coating to the exterior sun-facing layer of the photovoltaic module, allowing the photovoltaic module to operate, removing the coating from the photovoltaic module, and reapplying the coating to the photovoltaic module.

Abstract: The present invention relates to composite polymeric particles for use as infrared reflectors in optical bandpass applications.

Abstract: Cross-point memory array devices containing an electric field programmable film with data stored in multi-bit format are provided. Also provided are data processing devices comprising cross-point memory array devices with data stored in multi-bit format. Further provided are methods of storing multi-bit data in cross-point memory array devices and methods of using such devices.

Abstract: An electric field programmable film composition is disclosed containing a binder and (a) an electron donor and an electron acceptor, wherein at least one of: (i) the concentration of the electron donor is <0.05 wt % and (ii) the concentration of the electron acceptor is <0.05 wtO/o or (b) an electron donor and an electron acceptor, wherein the electron donor and/or the electron acceptor is chemically bound to the binder. Also disclosed are methods for manufacturing an electric field programmable film on a substrate. Also disclosed are memory devices, wherein the memory device comprises an electric field programmable film.

Abstract: Disclosed is a memory cell having an access transistor and an electric field programmable bi-stable element. The access transistor may be a (N-channel or P-channel) MOSFET transistor having a gate, source or drain region coupled to the electric field programmable bi-stable or multi-stable element (hereinafter collectively, “bi-stable element” unless expressly indicated otherwise). The access transistor facilitates selective and controllable programming and reading of the electric field programmable bi-stable element. Also disclosed is a plurality of memory cells, each having a unique, different and/or distinct electric field programmable bi-stable element and a common access transistor and a common access transistor. In yet another aspect, a differential memory cell having a plurality of memory cells configured to store complementary data states is disclosed.