Abstract: Photodiodes configured to convert incident photons in the short-wave infrared (SWIR) to electric current, where the photodiodes have a PbS/PbClx core/shell nanocrystal absorber layer. The PbClx shell in the PbS/PbClx nanocrystals provide native passivation in the (100) crystal facets and enable removal of pre-device processing ligands and ligand exchange on the (111) crystal facets of the PbS/PbClx nanocrystals such that the photodiode exhibits reduced current densities under reverse bias and greater infrared photoresponse, providing improved device performance as compared to photodiodes having absorber layers formed from PbS core nanocrystals alone.

Abstract: An infrared detector and a method for forming it are provided. The detector includes absorber, barrier, and contact regions. The absorber region includes a first semiconductor material, with a first lattice constant, that produces charge carriers in response to infrared light. The barrier region is disposed on the absorber region and comprises a superlatice that includes (i) first barrier region layers comprising the first semiconductor material, and (ii) second barrier region layers comprising a second semiconductor material, different from, but lattice matched to, the first semiconductor material. The first and second barrier region layers are alternatingly arranged. The contact region is disposed on the barrier region and comprises a superlattice that includes (i) first contact region layers comprising the first semiconductor material, and (ii) second contact region layers comprising the second semiconductor material layer. The first and second contact region layers are alternatingly arranged.

Abstract: An infrared detector and a method for forming it are provided. The detector includes absorber, barrier, and contact regions. The absorber region includes a first semiconductor material, with a first lattice constant, that produces charge carriers in response to infrared light. The barrier region is disposed on the absorber region and comprises a superlatice that includes (i) first barrier region layers comprising the first semiconductor material, and (ii) second barrier region layers comprising a second semiconductor material, different from, but lattice matched to, the first semiconductor material. The first and second barrier region layers are alternatingly arranged. The contact region is disposed on the barrier region and comprises a superlattice that includes (i) first contact region layers comprising the first semiconductor material, and (ii) second contact region layers comprising the second semiconductor material layer. The first and second contact region layers are alternatingly arranged.

Abstract: A device including an absorber layer that can be deposited on top of a bottom contact layer. Furthermore, a semi-intrinsic layer with an energy gap wider than that of the absorber layer can be deposited on top of the absorber layer. A top contact layer can be deposited on top of the semi-intrinsic layer. A conduction band and a valence band energy alignment can be positioned between the absorber layer and the top contact layer, and configured to allow photoexcited minority carriers to be collected while the flow of majority carriers from the absorber are blocked. At least one mesa can be formed by processing and removing layered materials to a depth at least near the bottom of the absorber layer. Finally, a shoulder can be formed in the at least one mesa within the semi-intrinsic layer by processing and removing the layered materials.

Abstract: An infrared detector and a method for forming it are provided. The detector includes absorber, barrier, and contact regions. The absorber region includes a first semiconductor material, with a first lattice constant, that produces charge carriers in response to infrared light. The barrier region is disposed on the absorber region and comprises a superlatice that includes (i) first barrier region layers comprising the first semiconductor material, and (ii) second barrier region layers comprising a second semiconductor material, different from, but lattice matched to, the first semiconductor material. The first and second barrier region layers are alternatingly arranged. The contact region is disposed on the barrier region and comprises a superlattice that includes (i) first contact region layers comprising the first semiconductor material, and (ii) second contact region layers comprising the second semiconductor material layer. The first and second contact region layers are alternatingly arranged.

Abstract: A computationally efficient method for building a superlattice structure that improves an optoelectronic device performance characteristic that depends on fundamental superlattice material properties such as absorption coefficient ?(?), radiative efficiency Rsp and/or electron density n.

Abstract: This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).

Abstract: This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).