Patents by Inventor Edward Harold Hurt

Edward Harold Hurt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
    Patent number: 7304334
    Abstract: Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided on the SiC substrate. The epitaxial SiC emitter region has a second conductivity type, different from the first conductivity type. The epitaxial SiC emitter region has first and second portions. The first portion is provided on the SiC substrate and the second portion is provided on the first portion. The second portion has a higher carrier concentration than the first portion. Related methods of fabricating BJTs are also provided herein.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: December 4, 2007
    Assignee: Cree, Inc.
    Inventors: Anant K. Agarwal, Sumithra Krishnaswami, Sei-Hyung Ryu, Edward Harold Hurt