Patents by Inventor Edward Hartley Sargent
Edward Hartley Sargent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140291608Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: ApplicationFiled: May 12, 2014Publication date: October 2, 2014Applicant: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J.D. Klem, Larissa Levina
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Patent number: 8822897Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.Type: GrantFiled: March 18, 2011Date of Patent: September 2, 2014Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 8803128Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: September 8, 2011Date of Patent: August 12, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Patent number: 8785908Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: May 16, 2012Date of Patent: July 22, 2014Assignee: InVisage Technologies, Inc.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Patent number: 8759816Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: September 16, 2011Date of Patent: June 24, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Keith William Johnston, Andras Geza Pattantyus-Abraham, Jason Paul Clifford
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Publication number: 20140161363Abstract: Various embodiments comprise apparatuses and methods including a light sensor. The light sensor includes a first electrode, a second electrode, a third electrode, and a light-absorbing semiconductor in electrical communication with each of the first electrode, the second electrode, and the third electrode. A light-obscuring material to substantially attenuate an incidence of light onto a portion of the light-absorbing semiconductor is disposed between the second electrode and the third electrode. An electrical bias is to be applied between the second electrode, and the first and the third electrodes and a current flowing through the second electrode is related to the light incident on the light sensor. Additional methods and apparatuses are described.Type: ApplicationFiled: December 10, 2013Publication date: June 12, 2014Inventors: Edward Hartley Sargent, Jess Jan Young Lee, Hui Tian
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Patent number: 8724366Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: GrantFiled: March 21, 2013Date of Patent: May 13, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J. D. Klem, Larissa Levina
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Publication number: 20140118584Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.Type: ApplicationFiled: October 30, 2013Publication date: May 1, 2014Inventors: Jess Jan Young Lee, Michael Hepp, Edward Hartley Sargent
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Publication number: 20130250150Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array may include at least four megapixels and the second image sensor array may include one-half or less than the number of pixels in the first image sensor array.Type: ApplicationFiled: May 14, 2013Publication date: September 26, 2013Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Publication number: 20130228749Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: ApplicationFiled: March 21, 2013Publication date: September 5, 2013Applicant: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J.D. Klem, Larissa Levina
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Patent number: 8476616Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: September 16, 2011Date of Patent: July 2, 2013Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20130089237Abstract: Various embodiments comprise apparatuses and methods including a light sensor. The light sensor includes a first electrode, a second electrode, a third electrode, and a light-absorbing semiconductor in electrical communication with each of the first electrode, the second electrode, and the third electrode. A light-obscuring material to substantially attenuate an incidence of light onto a portion of the light-absorbing semiconductor is disposed between the second electrode and the third electrode. An electrical bias is to be applied between the second electrode, and the first and the third electrodes and a current flowing through the second electrode is related to the light incident on the light sensor. Additional methods and apparatuses are described.Type: ApplicationFiled: October 10, 2012Publication date: April 11, 2013Applicant: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jess Jan Young Lee, Hui Tian
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Patent number: 8415192Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: September 16, 2011Date of Patent: April 9, 2013Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jiang Tang
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Publication number: 20130049738Abstract: Photo-field-effect transistor devices and associated methods are disclosed in which a photogate, consisting of a quantum dot sensitizing layer, transfers photoelectrons to a semiconductor channel across a charge-separating (type-II) heterointerface, producing a sustained primary and secondary flow of carriers between source and drain electrodes. The light-absorbing photogate thus modulates the flow of current along the channel, forming a photo-field effect transistor.Type: ApplicationFiled: August 28, 2012Publication date: February 28, 2013Inventor: Edward Hartley Sargent
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Publication number: 20130001520Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: September 8, 2011Publication date: January 3, 2013Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20120280226Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: ApplicationFiled: May 16, 2012Publication date: November 8, 2012Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Publication number: 20120189532Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: September 16, 2011Publication date: July 26, 2012Inventors: Edward Hartley Sargent, Jiang Tang
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Publication number: 20120180856Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: September 16, 2011Publication date: July 19, 2012Inventors: Edward Hartley Sargent, Keith William Johnston, Andras Geza Pattantyus-Abraham, Jason Paul Clifford
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Patent number: 8203195Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: July 20, 2009Date of Patent: June 19, 2012Assignee: InVisage Technologies, Inc.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Patent number: 8138567Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises an n-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: July 20, 2009Date of Patent: March 20, 2012Assignee: InVisage Technologies, Inc.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian