Patents by Inventor Edward J. Nowak, Jr.

Edward J. Nowak, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7115947
    Abstract: Disclosed is a method and structure for a fin-type field effect transistor (FinFET) structure that has different thickness gate dielectrics covering the fins extending from the substrate. These fins have a central channel region and source and drain regions on opposite sides of the channel region. The thicker gate dielectrics can comprise multiple layers of dielectric and the thinner gate dielectrics can comprise less layers of dielectric. A cap comprising a different material than the gate dielectrics can be positioned over the fins.
    Type: Grant
    Filed: March 18, 2004
    Date of Patent: October 3, 2006
    Assignee: International Business Machines Corporation
    Inventors: William F. Clark, Jr., Edward J. Nowak, Jr.