Abstract: Workstation apparatus for automatically and vertically removing defective devices from delicate high density multilayer interconnect substrates, and for removing devices and substrates from large area substrates without damaging the substrates or closely-spaced neighboring devices on the substrates. The apparatus is also usable to precisely measure semiconductor attach shear strength by applying a torsional force and identifying the arc angle to failure. A table assembly positions and secures a substrate comprising a device to be removed. A thermode is adhered to the device to be removed with a high temperature thermosetting adhesive. A heater stage in the table assembly preheats the substrate including the device to be removed. The thermode has a strip heater, a thermocouple and a passage for a cooling fluid. The thermode temperature is adjustable for curing the adhesive and for loosening the device from the substrate. The device is removed by applying torque and vertical tensile loading at the same time.

Abstract: Method and apparatus for vertically removing semiconductor integrated circuits (91) from high density multichip hybrid microcircuits without interfering with close proximity neighboring devices. An integrated circuit (91) is vertically removed by simultaneously applying tensile and torsional forces thereto. By using the present invention to transfer some of the tensile force torsionally, high density multilayer interconnect substrates (93) survive the rework process without damage. The present invention employs techniques which allow for accurate and repeatable removal of closely spaced integrated circuit devices. Removal of an integrated circuit (91) is accomplished by bonding a special thermode device (70, 70') directly to the integrated circuit (91) using a thermoset, or a thermoplastic, die attach material (90). Once the thermode (70, 70') has been attached, tensile and torsional forces are applied to the integrated circuit (91) through the attached thermode (70, 70').