Abstract: An electrochemical electrode comprising a tin-based catalyst, method of making, and method of use are provided. Catalyst particles are prepared which comprise tin deposits of about 0.1 nm to about 10 nm deposited onto carbon support. Preparing an ink comprising the catalyst particles and a binder enable an electrode to be prepared comprising the catalyst particles bound to an electrode substrate. The electrode may then be used in an apparatus and process to reduce carbon dioxide to products such as formate and formic acid at Faradaic Efficiencies up to 95 percent.

Abstract: An electrochemical electrode comprising a tin-based catalyst, method of making, and method of use are provided. Catalyst particles are prepared which comprise tin deposits of about 0.1 nm to about 10 nm deposited onto carbon support. Preparing an ink comprising the catalyst particles and a binder enable an electrode to be prepared comprising the catalyst particles bound to an electrode substrate. The electrode may then be used in an apparatus and process to reduce carbon dioxide to products such as formate and formic acid at Faradaic Efficiencies up to 95 percent.

Abstract: Embodiments of crystalline, titanium silicate molecular sieves are described having a formula representing mole ratios of oxides of nM1O:TiO2:ySiO2:zH2O:wX where M1 refers to a metal cation or mixture of metal cations; n is from about 1 to about 2; y is from about 1 to about 10; z is from 0 to about 100; X is a halide anion other than fluorine, or combination of halide anions that excludes fluorine; and w is greater than 0. The pore size of the sieves can be adjusted by ion exchanging M1 cations with a suitable amount of another species. Embodiments of the invention are useful for various adsorptive fluid separation processes, including pressure swing adsorption processes. For example, disclosed embodiments are useful for separating methane from air.

Abstract: Embodiments of crystalline, titanium silicate molecular sieves are described having a formula representing mole ratios of oxides of nM1O:TiO2:ySiO2:zH2O:wX where M1 refers to a metal cation or mixture of metal cations; n is from about 1 to about 2; y is from about 1 to about 10; z is from 0 to about 100; X is a halide anion other than fluorine, or combination of halide anions that excludes fluorine; and w is greater than 0. The pore size of the sieves can be adjusted by ion exchanging M1 cations with a suitable amount of another species. Embodiments of the invention are useful for various adsorptive fluid separation processes, including pressure swing adsorption processes. For example, disclosed embodiments are useful for separating methane from air.

Abstract: An inventive adsorptive gas separation process is provided capable of producing a purified methane product gas as a light non-adsorbed product gas as opposed to a heavy desorbed exhaust gas component, from a feed gas mixture comprising at least methane, and carbon dioxide. In an embodiment of the invention, the feed gas mixture may comprise at least about 10% carbon dioxide, and the purified methane product gas may be desirably purified to contain less than about 5000 ppm carbon dioxide. In another embodiment of the invention, the feed gas mixture may comprise at least about 50% carbon dioxide, and the purified methane product gas may be desirably purified to contain less than about 5000 ppm carbon dioxide.

Abstract: Embodiments of crystalline, titanium silicate molecular sieves are described having a formula representing mole ratios of oxides of n M1O:TiO2:y SiO2:zH2O:wX where Mi refers to a metal cation or mixture of metal cations; n is from about 1 to about 2; y is from about 1 to about 10; z is from 0 to about 100; X is a halide anion other than fluorine, or combination of halide anions that excludes fluorine; and w is greater than 0. The pore size of the sieves can be adjusted by ion exchanging Mi cations with a suitable amount of another species. Embodiments of the invention are useful for various adsorptive fluid separation processes, including pressure swing adsorption processes. For example, disclosed embodiments are useful for separating methane from air.

Abstract: Improved adsorbent sheet based parallel passage adsorbent structures for enhancing the kinetic selectivity of certain kinetic-controlled adsorption processes, such as PSA, TSA and PPSA processes, and combinations thereof, are provided. The enhancements in kinetic selectivity made possible through the implementation of the present inventive improved adsorbent structures may unexpectedly enable significant intensification of selected kinetic adsorption processes relative to attainable performance with conventional adsorbent materials in beaded or extruded form. Such process intensification enabled by the present inventive adsorbent structures may provide for increased adsorption cycle frequencies, and increased gas flow velocities within the adsorbent beds, which may increase the productivity and/or recovery of a kinetic adsorption system incorporating the inventive adsorbent structures.

Abstract: A molecular sieve adsorbent for the purification of gas streams containing water vapor and carbon dioxide. The adsorbent is a combination of sodium form of a low-silica faujasite, having a residual content of potassium ions less than about 8.0 percent (equiv.), a low content of crystalline and amorphous admixtures and crystal sizes generally within the range of 1-4 &mgr;m, and a binder. A process for the adsorbent preparation which comprises specific parameters of low silica faujasite synthesis, sodium-potassium ion exchange, blending and granulation.

Abstract: An adsorbent-catalyst for removal of sulphur compounds from sulfur compound contaminated gas and liquid feed streams, wherein the adsorbent-catalyst is a synthetic X or Y faujasite with a silica to alumina ratio from 1.8:1 to about 5:1 and wherein 40 to 90% of the cations of the faujasite include transition metals of Groups IB, IIB and VIIB with the balance of the cations being alkali or alkaline earth metals.

Abstract: A molecular sieve adsorbent for the purification of gas streams containing water vapor and carbon dioxide. The adsorbent is a combination of sodium form of a low-silica faujasite, having a residual content of potassium ions less than about 8.0 percent (equiv.), a low content of crystalline and amorphous admixtures and crystal sizes generally within the range of 1-4 &mgr;m, and a binder.

Abstract: A molecular sieve adsorbent for the purification of gas streams containing water vapor and carbon dioxide and a process for its preparation. The adsorbent is a sodium form of a low-silica faujasite having a silica to alumina ratio of about 1.8:1 to about 2.2:1, a residual content of potassium ions less than about 8.0 percent (equiv.), a low content of crystalline and amorphous admixtures and crystal sizes generally within the range of 1-4 &mgr;m, blended with a binder.

Abstract: An adsorbent for organic sulfur compound removal from mineral, vegetable or animal oils useful to protect a hydrogenation catalyst against poisoning, wherein the adsorbent is a zinc-exchanged form of low silica faujasite with a silica to alumina ratio from about 1.8 to about 2.1, wherein the adsorbent contains an inequivalent excess of zinc cations from about 8 to about 20% (equiv.) and a process for manufacture and use of the adsorbent.

Abstract: A system for depositing a film on a substrate in a CVD process has a second-source injection sub-system for injecting a control gas. The deposition rate of the material deposited in the CVD process is a function of the concentration of the control gas at the point that material is deposited. The second source injection sub-system provides a concentration gradient of the control gas relative to the substrate surface coated, and alters the thickness uniformity of the film. By controlling the gradient one may control the thickness uniformity profile. In another embodiment, the invention applies to dry etching with reactive gas, and the etching rate is controlled by second source provision of a control gas.

Abstract: A chemical vapor deposition process performed at a temperature below 440 degrees C. for blanket tungsten deposition as a step in manufacturing integrated circuits deposits an integrated film suitable for voidless fill of vias as small as 0.5 microns in width and with aspect ratios of more than 2, while providing resistivity well below 100 micro-ohms per square, film stress generally in the mid 7E+09 dynes per square centimeter and below, and reflectivity of more than 40%, measured relative to silicon at 436 nanometer wavelength for 1 micron film thickness, while avoiding the use of nitrogen in the process.