Patents by Inventor Edward James Williams
Edward James Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230197869Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: November 3, 2022Publication date: June 22, 2023Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Publication number: 20230057290Abstract: Methods and compositions for plastid transformation and regeneration or development of transplastomic plants are provided. Embryo explants may be excised from seeds, and their meristematic tissue may be transformed directly without initiation of any callus phase before and/or after transformation. The present methods may be performed with fewer culturing steps relative to conventional methods, thereby enabling more rapid and efficient production of targeted transplastomic events in plants.Type: ApplicationFiled: August 10, 2022Publication date: February 23, 2023Inventors: Brian J. Martinell, Anna Mary O'Keefe, David Alan Somers, Edward James Williams, Xudong Ye
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Patent number: 11527663Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: June 20, 2018Date of Patent: December 13, 2022Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Publication number: 20220393048Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: August 8, 2022Publication date: December 8, 2022Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 11512320Abstract: Disclosed herein are methods for the production of Cannabis meristem explants from dry seeds. Also described are methods of transforming and gene editing using the Cannabis meristem explants disclosed herein.Type: GrantFiled: April 23, 2021Date of Patent: November 29, 2022Assignee: Wisconsin Alumni Research FoundationInventors: Michael W. Petersen, Edward James Williams, Robert Harnish, Heidi Flewelling Kaeppler, Brian Martinell, Ray Collier, Frank McFarland, Shawn Michael Kaeppler
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Patent number: 11469338Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: June 24, 2020Date of Patent: October 11, 2022Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Publication number: 20220246872Abstract: A photovoltaic device comprises a PIN structure in which a p-type hole transporting layer (2) is carried by a substrate (1) and a perovskite layer (3) and an n-type electron transporting layer (4) are arranged in sequence on the p-type layer. A light transmissive electrically conductive layer (9) is provided on top of the n-type electron transporting layer to form a light receiving top surface. Between the n-type electron transporting layer and the light transmissive conductive layer there is provided a structure comprising two inorganic electrically insulative layers (6, 8) having a layer of a conductive material (7) therebetween, wherein the two inorganic electrically insulative layers comprise a material having a band gap of greater than 4.5 eV and the layer of a conductive material comprises a material having a band gap of less than the band gap of the electrically insulative layers, wherein each electrically insulative layer forms a type-1 offset junction with the layer of conductive material.Type: ApplicationFiled: May 14, 2020Publication date: August 4, 2022Inventors: Ben WILLIAMS, Nicola BEAUMONT, Edward James William CROSSLAND
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Patent number: 11377662Abstract: The present disclosure provides methods for the stable transformation of meristem explants from cowpeas (Vigna unguiculata) and dry beans (Phaseolus vulgaris).Type: GrantFiled: January 9, 2019Date of Patent: July 5, 2022Assignee: WISCONSIN ALUMNI RESEARCH FOUNDATIONInventors: Michael William Petersen, Brian Joseph Martinell, Edward James Williams, Shawn Michael Kaeppler, Heidi F. Kaeppler
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Patent number: 11266086Abstract: Disclosed herein are methods for the production of value added explants from the seeds of dicotyledonous cultivars of interest. Also described are methods of transformation using the value added explants produced by the methods disclosed herein.Type: GrantFiled: January 9, 2019Date of Patent: March 8, 2022Assignee: WISCONSIN ALUMNI RESEARCH FOUNDATIONInventors: Michael William Petersen, Brian Joseph Martinell, Edward James Williams, Amy Jo Miyamoto, Shawn Michael Kaeppler, Heidi F. Kaeppler, Robert Wayne Harnish
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Publication number: 20210254083Abstract: Disclosed herein are methods for the production of Cannabis meristem explants from dry seeds. Also described are methods of transforming and gene editing using the Cannabis meristem explants disclosed herein.Type: ApplicationFiled: April 23, 2021Publication date: August 19, 2021Applicant: Wisconsin Alumni Research FoundationInventors: Michael W. Petersen, Edward James Williams, Robert Harnish, Heidi Flewelling Kaeppler, Brian Martinell, Ray Collier, Frank McFarland, Shawn Michael Kaeppler
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Publication number: 20210071186Abstract: Disclosed herein are methods for the production of Cannabis meristem explants from dry seeds. Also described are methods of transforming and gene editing using the Cannabis meristem explants disclosed herein.Type: ApplicationFiled: July 16, 2020Publication date: March 11, 2021Applicant: Wisconsin Alumni Research FoundationInventors: Michael W. Petersen, Edward James Williams, Robert Harnish, Heidi Flewelling Kaeppler, Brian Martinell, Ray Collier, Frank McFarland, Shawn Michael Kaeppler
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Publication number: 20200396918Abstract: Disclosed herein are methods for sterile extraction, drying, storage, and transformation of immature and mature maize and monocot embryos. The present disclosure also describes a dried, storable, freezable value added maize and monocot explants.Type: ApplicationFiled: June 18, 2020Publication date: December 24, 2020Applicant: Wisconsin Alumni Research FoundationInventors: Brian Joseph Martinell, Michael William Petersen, Edward James Williams, Frank Lloyd McFarland, Nathaniel Schleif, Shawn Michael Kaeppler, Heidi Flewelling Kaeppler
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Publication number: 20200365748Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: June 24, 2020Publication date: November 19, 2020Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 10777364Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metal cations M; one or more second cations A?; one or more first anions X and one or more second anions X?.Type: GrantFiled: October 16, 2019Date of Patent: September 15, 2020Assignee: OXFORD PHOTOVOLTAICS LIMITEDInventors: Nicola Beaumont, Brett Akira Kamino, Benjamin Langley, Edward James William Crossland
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Patent number: 10593487Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX 3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metalcations M; one or more second cations A?; one or more first anions X and one or more second anions X?.Type: GrantFiled: September 2, 2015Date of Patent: March 17, 2020Assignee: OXFORD PHOTOVOLTAICS LIMITEDInventors: Nicola Beaumont, Brett Akira Kamino, Benjamin Langley, Edward James William Crossland
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Publication number: 20200051752Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metal cations M; one or more second cations A?; one or more first anions X and one or more second anions X?.Type: ApplicationFiled: October 16, 2019Publication date: February 13, 2020Inventors: Nicola BEAUMONT, Brett Akira KAMINO, Benjamin LANGLEY, Edward James William CROSSLAND
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Publication number: 20190208723Abstract: Disclosed herein are methods for the production of value added explants from the seeds of dicotyledonous cultivars of interest. Also described are methods of transformation using the value added explants produced by the methods disclosed herein.Type: ApplicationFiled: January 9, 2019Publication date: July 11, 2019Inventors: Michael William Petersen, Brian Joseph Martinell, Edward James Williams, Amy Jo Miyamoto, Shawn Michael Kaeppler, Heidi F. Kaeppler, Robert Wayne Harnish
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Publication number: 20190211347Abstract: The present disclosure provides methods for the stable transformation of meristem explants from cowpeas (Vigna unguiculata) and dry beans (Phaseolus vulgaris).Type: ApplicationFiled: January 9, 2019Publication date: July 11, 2019Inventors: Michael William Petersen, Brian Joseph Martinell, Edward James Williams, Shawn Michael Kaeppler, Heidi F. Kaeppler
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Publication number: 20180315870Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: June 20, 2018Publication date: November 1, 2018Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 10069025Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: September 17, 2013Date of Patent: September 4, 2018Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo