Patents by Inventor Edward James Williams CROSSLAND
Edward James Williams CROSSLAND has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230197869Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: November 3, 2022Publication date: June 22, 2023Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 11527663Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: June 20, 2018Date of Patent: December 13, 2022Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Publication number: 20220393048Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: August 8, 2022Publication date: December 8, 2022Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 11469338Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: June 24, 2020Date of Patent: October 11, 2022Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Publication number: 20220246872Abstract: A photovoltaic device comprises a PIN structure in which a p-type hole transporting layer (2) is carried by a substrate (1) and a perovskite layer (3) and an n-type electron transporting layer (4) are arranged in sequence on the p-type layer. A light transmissive electrically conductive layer (9) is provided on top of the n-type electron transporting layer to form a light receiving top surface. Between the n-type electron transporting layer and the light transmissive conductive layer there is provided a structure comprising two inorganic electrically insulative layers (6, 8) having a layer of a conductive material (7) therebetween, wherein the two inorganic electrically insulative layers comprise a material having a band gap of greater than 4.5 eV and the layer of a conductive material comprises a material having a band gap of less than the band gap of the electrically insulative layers, wherein each electrically insulative layer forms a type-1 offset junction with the layer of conductive material.Type: ApplicationFiled: May 14, 2020Publication date: August 4, 2022Inventors: Ben WILLIAMS, Nicola BEAUMONT, Edward James William CROSSLAND
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Publication number: 20200365748Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: June 24, 2020Publication date: November 19, 2020Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 10777364Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metal cations M; one or more second cations A?; one or more first anions X and one or more second anions X?.Type: GrantFiled: October 16, 2019Date of Patent: September 15, 2020Assignee: OXFORD PHOTOVOLTAICS LIMITEDInventors: Nicola Beaumont, Brett Akira Kamino, Benjamin Langley, Edward James William Crossland
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Patent number: 10593487Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX 3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metalcations M; one or more second cations A?; one or more first anions X and one or more second anions X?.Type: GrantFiled: September 2, 2015Date of Patent: March 17, 2020Assignee: OXFORD PHOTOVOLTAICS LIMITEDInventors: Nicola Beaumont, Brett Akira Kamino, Benjamin Langley, Edward James William Crossland
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Publication number: 20200051752Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metal cations M; one or more second cations A?; one or more first anions X and one or more second anions X?.Type: ApplicationFiled: October 16, 2019Publication date: February 13, 2020Inventors: Nicola BEAUMONT, Brett Akira KAMINO, Benjamin LANGLEY, Edward James William CROSSLAND
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Publication number: 20180315870Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: June 20, 2018Publication date: November 1, 2018Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 10069025Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: September 17, 2013Date of Patent: September 4, 2018Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Publication number: 20170358398Abstract: There is provided a photovoltaic device that comprises a front electrode, a back electrode, and disposed between the front electrode and the back electrode, an electron transporter region comprising an electron transporter layer; a hole transporter region comprising a hole transporter layer, and a layer of perovskite semiconductor disposed between and in contact with the electron transporter layer and the hole transporter layer. The electron transporter region is nearest to the front electrode and the hole transporter region is nearest to the back electrode, and the electron transporter layer comprises any of a chalcogenide material and an organic material and has a thickness of at least 2 nm.Type: ApplicationFiled: November 11, 2015Publication date: December 14, 2017Applicant: Oxford Photovoltaics LimitedInventors: Nicola BEAUMONT, Brett Akira KAMINO, Benjamin LANGLEY, Edward James William CROSSLAND, Henry James SNAITH
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Publication number: 20170243699Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX 3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metalcations M; one or more second cations A?; one or more first anions X and one or more second anions X?.Type: ApplicationFiled: September 2, 2015Publication date: August 24, 2017Inventors: Nicola BEAUMONT, Brett Akira KAMINO, Benjamin LANGLEY, Edward James William CROSSLAND
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Publication number: 20160013434Abstract: The invention provides a process for producing a layer of a semiconductor material, wherein the process comprises: a) disposing on a substrate: i) a plurality of particles of a semiconductor material, ii) a binder, wherein the binder is a molecular compound comprising at least one metal atom or metalloid atom, and iii) a solvent; and b) removing the solvent. The invention also provides a layer of semiconductor material obtainable by this process. In a preferred embodiment, the particles of a semiconductor material comprise mesoporous particles of the semiconductor material or mesoporous single crystals of the semiconductor material.Type: ApplicationFiled: February 28, 2014Publication date: January 14, 2016Inventors: Henry James SNAITH, Edward James Williams CROSSLAND, Nakita NOEL, Varun SIVARAM, Tomas LEIJTENS
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Publication number: 20150249170Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: September 17, 2013Publication date: September 3, 2015Applicant: ISIS INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo