Abstract: An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducting an ionizable gas into the gas confinement chamber. A cathode is supported by the base and positioned with respect to said gas confinement chamber to emit ionizing electrons into the gas ionization zone. The cathode comprises a tubular conductive body that partially extends into the gas confinement chamber and includes a conductive cap that faces into the gas confinement chamber for emitting ionizing electrons into the gas confinement chamber.

Abstract: An ion beam source. The source includes multiple apertures bounded in close proximity by an extraction electrode for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam which, in one utilization of the invention, is used for ion beam treatment of a silicon wafer. Individual electrodes in close proximity to the extraction electrode can be biased to either inhibit or allow backstreaming of neutralizing electrons from beam portions close to the source back to the extraction electrode. This allows the beam portion to become deneutralized and, therefore, unstable. The unstable beam is diminished in intensity since positively charged ions within that beam portion exit the beam. An isolation plate separates beam portions in close proximity to the extraction electrode to inhibit beam crosstalk and an additional suppression electrode common to all beam portions is controllably biased to further enhance control over beam portion intensity.

Abstract: An ion implantation source used in an ion implantation system. The source produces multiple beam portions which combine to form a large diameter beam of the size of a workpiece. By controlling beam neutralization of the individual beam portions the ion density as a function of position within the cross-section of the beam can be controlled.