Abstract: Whether a connector element electrically connected to a direct-current output of a converter that converts alternating current into direct current is connected to an external device may be detected. The converter may be disabled in response to the electrical connector component not being connected to the external device. In response to the electrical connector component being connected to the external device, the converter may be enabled.

Abstract: A voltage converter system having a converter and a connector system may include a control circuit that enables or disables the converter in response to the connection status of the connector system.

Abstract: A voltage converter system having a converter and a connector system may include a control circuit that enables or disables the converter in response to the connection status of the connector system.

Abstract: A system for facilitating supplier qualification and quality management functions includes an application executing on a host system and a web-based user interface provided by the application, the web-based user interface collaboratively enabling qualification of suppliers, parts, and technologies over a network. The system also includes a shared data repository and a workstation in communication with the host system, and a supplier in communication with the host system via the user interface and network. The collaborative qualification includes acquiring supplier capabilities, part data, and supplier technology data from a collaborative source via the user interface. The collaborative qualification also includes storing acquired data in the shared data repository, and performing quality management functions via the user interface and shared data repository.

Abstract: An exemplary embodiment of the invention relates to an integrated computer-based method and system for facilitating supplier qualification and quality management. This computer-based method and system includes a host system receiving a request from a user system to execute supplier qualification and quality management software, executing the requested software at the host system, sending results of the software execution to the user system, receiving input at the host system from the user system in response to the software execution, and providing the user system with output generated as a result of executing the software. The supplier qualification and quality management software includes a selection module, a qualification module and a quality module.

Abstract: An exemplary embodiment of the invention relates to an integrated computer-based method and system for facilitating supplier qualification and quality management. This computer-based method and system includes a host system receiving a request from a user system to execute supplier qualification and quality management software, executing the requested software at the host system, sending results of the software execution to the user system, receiving input at the host system from the user system in response to the software execution, and providing the user system with output generated as a result of executing the software. The supplier qualification and quality management software includes a selection module, a qualification module and a quality module.

Abstract: The present invention provides a method for fabricating tungsten local interconnections in high density CMOS circuits, and also provides high density CMOS circuits having local interconnections formed of tungsten. Pursuant to the method, an etch stop layer of chromium is initially deposited on the circuit elements of the CMOS silicon substrate. Next, a conductive layer of tungsten is non-selectively deposited on the chromium layer. A photoresist mask is then lithographically patterned over the tungsten layer. The tungsten layer is then etched down to, and stopping at, the chromium layer, after which the photoresist mask is stripped. The stripping preferably uses a low temperature plasma etch in O.sub.2 at a temperature of less than 100.degree. C. Finally, a directional O.sub.2 reactive ion etch is used to remove the chromium layer selectively to the silicon substrate. Borderless contacts are formed with the aid of the chromium etch stop layer beneath the tungsten local interconnection layer.

Abstract: The present invention provides a method for fabricating tungsten local interconnections in high density CMOS circuits, and also provides high density CMOS circuits having local interconnections formed of tungsten. Pursuant to the method, an etch stop layer of chromium is initially deposited on the circuit elements of the CMOS silicon substrate. Next, a conductive layer of tungsten is non-selectively deposited on the chromium layer. A photoresist mask is then lithographically patterned over the tungsten layer. The tungsten layer is then etched down to, and stopping at, the chromium layer, after which the photoresist mask is stripped. The stripping preferably uses a low temperature plasma etch in O.sub.2 at a temperature of less than 100.degree. C. Finally, a directional O.sub.2 reactive ion etch is used to remove the chromium layer selectively to the silicon substrate. Borderless contacts are formed with the aid of the chromium etch stop layer beneath the tungsten local interconnection layer.

Abstract: A method for fabricating bipolar and CMOS devices in integrated circuits using W as a local interconnect and via landing pad for bipolar and CMOS devices. The method includes the forming of an oxide/silicon bilayer above a local interconnect of tungsten/titanium wherein the oxide is patterned as a mask for the silicon/tungsten/titanium reactive ion etch, and the silicon layer above the tungsten/titanium layer is used as an etch stop for a via etch. The silicon layer is then reacted and converted to titanium silicide after the via etch to provide a low resistance path in the via from the local interconnect in a self aligned manner.