Abstract: Contact structures for semiconductor devices are disclosed. Contact structures that include a metal layer and a substrate of a semiconductor device may be annealed to provide suitable contact resistance. Localized annealed regions may be formed in a pattern within the contact structure to provide a desired contact resistance while reducing exposure of other portions of the semiconductor device to anneal conditions. The annealed regions may be formed in patterns that reduce intersections between annealed regions and fracture planes of the substrate, thereby improving mechanical robustness of the semiconductor device. The patterns may include annealed regions formed in lines that are nonparallel with fracture planes of the substrate. The patterns may also include annealed regions formed in lines that are nonparallel with peripheral edges of the substrate.

Abstract: Contact structures for semiconductor devices are disclosed. Contact structures that include a metal layer and a substrate of a semiconductor device may be annealed to provide suitable contact resistance. Localized annealed regions may be formed in a pattern within the contact structure to provide a desired contact resistance while reducing exposure of other portions of the semiconductor device to anneal conditions. The annealed regions may be formed in patterns that reduce intersections between annealed regions and fracture planes of the substrate, thereby improving mechanical robustness of the semiconductor device. The patterns may include annealed regions formed in lines that are nonparallel with fracture planes of the substrate. The patterns may also include annealed regions formed in lines that are nonparallel with peripheral edges of the substrate.

Abstract: A light emitting diode device (e.g., LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: A light emitting diode device (e.g., LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: A light emitting diode device (e.g., LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: In one embodiment, a single light emitting diode lamp package includes at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. In another embodiment, a LED device includes a first LED die and at least one additional LED die disposed at different positions within a common reflector cup. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: In one embodiment, a single light emitting diode lamp package includes at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. In another embodiment, a LED device includes a first LED die and at least one additional LED die disposed at different positions within a common reflector cup. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: In one embodiment, a single light emitting diode lamp package includes at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. In another embodiment, a LED device includes a first LED die and at least one additional LED die disposed at different positions within a common reflector cup. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: A method for epitaxial growth of Group III nitrides on a substrate using source gases consistent with metal organic chemical vapor deposition is provided. A heterostructure formed from two Group III nitride epitaxial layers is grown on a substrate in an atmosphere containing minimal hydrogen. The two Group III nitride epitaxial layers differ sufficiently in composition from one another in order to generate a two-dimensional electron gas at their interface. The substrate upon which the heterostructure is grown has a diameter of at least 100 mm.

Abstract: An LCD display includes a planar array of transmissive liquid crystal display (LCD) devices, and at least one laser diode device spaced apart from the planar array of LCD devices and configured to illuminate at least a subset of the LCD devices of the planar array of LCD devices such that, in operation, the laser diode device provides backlighting for the subset of LCD devices of the planar array of LCD devices.

Abstract: A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation in sheet resistivity across the wafer less than three percent; a standard deviation in electron mobility across the wafer of less than 1 percent; a standard deviation in carrier density across the wafer of no more than about 3.3 percent; and a standard deviation in conductivity across the wafer of about 2.5 percent.

Abstract: A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation in sheet resistivity across the wafer less than three percent; a standard deviation in electron mobility across the wafer of less than 1 percent; a standard deviation in carrier density across the wafer of no more than about 3.3 percent; and a standard deviation in conductivity across the wafer of about 2.5 percent.