Abstract: A semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.

Abstract: A method of fabricating a semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.

Abstract: A method of etching and regrowing III-V compounds in a sharply defined vertical feature. Molecular beam epitaxy is used to grow a laterally undefined vertical-cavity, surface-emitting diode laser structure from semiconducting III-V materials. The structure includes interference mirrors defining the end of a Fabry-Perot cavity and a quantum-well layer in the middle of the cavity. A tungsten mask is then defined over the areas of the intended two-dimensional array of lasers. A chemically assisted ion beam etches through to the bottom of the laser structure to from an array of high aspect-ratio pillars. A thermal chlorine gas etch removes a portion of the sidewalls of the pillars without attacking the tungsten, thereby removing ion-beam damage at the sides of the vertical-cavities and creating a lip of the tungsten mask overhanging the pillar sidewall. Organo-metallic chemical vapor deposition is used to regrow III-V material around the pillars. This growth process can quickly planarize the pillars.

Abstract: Polycrystalline alumina tubing is scribed by means of laser pulses which are reiteratively focused on the same spots at spaced time intervals. By drilling small holes, the laser need be on for a very short period of time only, and only the surface layers are vaporized, thereby minimizing heat shock. The holes are deepened by repeating the series of pulses and directing them sequentially into the same holes. For tubing, an encoder is used which senses the angular position of the tubing as it is rotated and causes the laser to deliver pulses at the same angles at every revolution. When the holes have been sufficiently deepened, the tubing is snapped and breaks clean in the plane of the holes.

Abstract: A titania-silicate glass zone or layer is formed at the surface in fused silica by first applying a thick opaque polycrystalline titania powder coating to the silica and then fusing the coating into the silica at a high temperature. Such a zone reduces the ultraviolet transmission of the silica and also lowers its sodium ion conductivity. The zone may usefully be formed on the fused silica arc tubes of metal halide lamps in order to inhibit sodium loss and on other discharge lamps required to be ozone free.

Abstract: A graded alumina silicate glass layer or zone is formed at the surface of fused silica by first applying a polycrystalline coating of aluminum oxide to the silica and then fusing the coating into the silica at a high temperature. Such a zone on the outside of the fused silica arc tube of a metal halide lamp containing sodium is particularly effective to inhibit sodium loss by diffusion through the tube walls.

Abstract: A titania-silicate glass zone or layer is formed at the surface in fused silica by first applying a thick opaque polycrystalline titania powder coating to the silica and then fusing the coating into the silica at a high temperature. Such a zone reduces the ultraviolet transmission of the silica and also lowers its sodium ion conductivity. The zone may usefully be formed on the fused silica arc tubes of metal halide lamps in order to inhibit sodium loss and on other discharge lamps required to be ozone free.